nanoHUB-U: Fundamentals of Nanotransistors, 2nd Edition
Course overview Offering: Spring 2016 Section: Default
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closeBackground Resources for Review
Reading Materials
- Primer on Semiconductor Fundamentals
Video Materials
- A Review of Semiconductor Fundamentals
Unit 1: Transistor Fundamentals
Lectures
- L1.1: Course Introduction
- L1.2: The MOSFET as a Black Box
- L1.3: MOSFET Device Metrics
- L1.4: Transistors to Circuits
- L1.5: Energy Band View of Transistors
- L1.6: Traditional IV Theory
- L1.7: The “Virtual Source Model”
- L1.8: Summary
Homework
- Unit 1: Homework
Exam
Unit 2: MOS Electrostatics
Lectures
- L2.1: Introduction
- L2.2: Depletion Approximation
- L2.3: Gate Voltage and Surface Potential
- L2.4: Flatband Voltage
- L2.5: Mobile Charge: Bulk MOS
- L2.6: Mobile Charge: ETSOI
- L2.7: 2D Electrostatics
- L2.8: The VS Model Revisited
- L2.9: Summary
Homework
- Unit 2: Homework
Exam
Unit 3: The Ballistic Nanotransistor
Lectures
- L3.1: Introduction
- L3.2: Landauer Approach
- L3.3: More on Landauer
- L3.4: The Ballistic MOSFET
- L3.5: The Velocity at the VS
- L3.6: Revisiting the VS Model
- L3.7: Summary
Homework
- Unit 3: Homework
Exam
Unit 4: Transmission Theory of the MOSFET
Lectures
- L4.1: Introduction
- L4.2: Transmission
- L4.3: MFP and Diffusion Coefficient
- L4.4: Transmission Theory of the MOSFET I
- L4.5: Transmission Theory of the MOSFET II
- L4.6: Connection to the VS Model
- L4.7: VS Analysis of Experiments
- L4.8: Limits and Limitations
- L4.9: Course Summary
Homework
- Unit 4: Homework
Exam
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