nanoHUB-U: Fundamentals of Nanotransistors, 2nd Edition

nanoHUB-U: Fundamentals of Nanotransistors, 2nd Edition

Offering: Spring 2016 Section: Default

Video
  • Lecture 1.7: Virtual Source Model 1. Lecture 1.7: Virtual Source Mo… 0
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  • IV characteristics of MOSFETs 2. IV characteristics of MOSFETs 54.788121454788126
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  • MOSFET: IV (re-cap) 3. MOSFET: IV (re-cap) 77.911244577911248
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  • Piecewise model for ID(VGS, VDS) 4. Piecewise model for ID(VGS, VD… 150.75075075075077
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  • From low VDS to high VDS 5. From low VDS to high VDS 273.70704037370706
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  • Empirical saturation function 6. Empirical saturation function 390.79079079079082
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  • Saturation function: FSAT (VD) 7. Saturation function: FSAT (VD) 449.14914914914914
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  • MOSFET: IV (re-cap) 8. MOSFET: IV (re-cap) 471.93860527193863
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  • Output resistance 9. Output resistance 489.95662328995667
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  • Intrinsic vs. extrinsic voltages 10. Intrinsic vs. extrinsic voltag… 580.94761428094762
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  • Effect of series resistances 11. Effect of series resistances 716.95028361695029
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  • Simple (Level 0) VS model 12. Simple (Level 0) VS model 810.77744411077742
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  • The MIT VS Model 13. The MIT VS Model 907.54087420754092
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  • Summary 14. Summary 945.61227894561227
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L1.7: The “Virtual Source Model”

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