nanoHUB-U: Fundamentals of Nanotransistors, 2nd Edition
Course overview Offering: Spring 2016 Section: Default
Video
-
1. Lecture 2.4: Flatband Voltage
0
00:00/00:00
-
2. Hypothetical, ideal MOS-C
25.025025025025027
00:00/00:00
-
3. Gate voltage and surface poten…
97.063730397063736
00:00/00:00
-
4. Real MOS-C at VG = 0
267.50083416750084
00:00/00:00
-
5. Example
359.35935935935936
00:00/00:00
-
6. Gate voltage vs. surface poten…
477.51084417751088
00:00/00:00
-
7. Recall: Threshold voltage exam…
526.09275942609281
00:00/00:00
-
8. Charge at the oxide-semiconduc…
578.67867867867869
00:00/00:00
-
9. Voltage drop across the oxide
634.86820153486826
00:00/00:00
-
10. Voltage drop across the oxide:…
687.42075408742073
00:00/00:00
-
11. Flatband voltage again
750.85085085085086
00:00/00:00
-
12. Recall: Threshold voltage exam…
774.87487487487488
00:00/00:00
-
13. Wrap up
885.21855188521863
00:00/00:00
You must be enrolled to utilize the discussion feature.
In order to access this part of the course, you need to enroll. If you're enrolled, you're not obligated to complete the course. But enrollment lets you:
- Take quizzes and exams
- Track your progress
- Add notes to lectures
- Participate in discussions
For more details, check out our enrollment benefits .
I'm convinced...now what?
Want more details about this and similar courses?
To learn more, either visit the course overview page or browse the course listing.