Resources (1-17 of 17)

1. Three Ideas to Achieve Negative Resistance

   Papers | 15 Jul 2022

2. 2DFET

   Tools | 18 Feb 2021 | Contributor(s):: Ning Yang, Tong Wu, Jing Guo

   Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.

3. A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

   Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser

   We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...

4. The Development and Use of Dopants to Modulate the Electrical Properties of Conjugated Polymers

   Online Presentations | 05 Feb 2019 | Contributor(s):: Seth R. Marder

   In this talk we will report on recent developments pertaining to surface modifiers and both n‐ and p‐dopants that could impact the charge injection/collection processes in organic light emitting diodes, organic field effect transistors, and organic photovoltaic and hybrid organic/inorganic...

5. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

   Online Presentations | 01 Nov 2016 | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

   IWCE 2015 presentation.

6. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model

   Downloads | 08 Feb 2016 | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen

   SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

7. High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling

   Online Presentations | 14 Jan 2015 | Contributor(s):: Martin Claus

   The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...

8. SPICE Model of Graphene Nanoribbon FETs (GNRFET)

   Downloads | 12 Jul 2013 | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen

   This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...

9. Device Physics and Simulation of Silicon Nanowire Transistors

   Papers | 28 Jun 2013 | Contributor(s):: Jing Wang

   As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

10. GFET Tool

    Tools | 20 May 2011 | Contributor(s):: Eric Pop, Feifei Lian

    Simulate the electrical and thermal properties of a graphene field-effect transistor.

11. OMEN Nanowire: solve the challenge

    Teaching Materials | 05 Feb 2011 | Contributor(s):: SungGeun Kim

    This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

12. CNT Mobility

    Tools | 26 Apr 2009 | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop

    Simulate field effect carrier mobility in back-gated CNTFET devices at low field

13. Band Structure Lab Demonstration: Bulk Strain

    Animations | 03 Jun 2009 | Contributor(s):: Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

14. ECE 612 Lecture 26: Heterostructure FETs

    0.0 out of 5 stars 

    Online Presentations | 10 Dec 2008 | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

15. Lecture 6: Quantum Transport in Nanoscale FETs

    5.0 out of 5 stars 

    Online Presentations | 12 Sep 2008 | Contributor(s):: Mark Lundstrom

    The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...

16. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    5.0 out of 5 stars 

    Tools | 16 Jul 2008 | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

17. MuGFET: First-Time User Guide

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    Teaching Materials | 28 Apr 2008 | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck

    MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...