2DFET is a Python simulator for calculating the I-V characteristics of field-effect transistors based on 2D materials. Both the ballistic limit and transport with scattering can be simulated. The 2D FET channel material can be either transition metal dichalcogenides (TMDCs), including MoS2, MoSe2, MoTe2, WS2, or black phosphorene (BP). Both n-type and p-type transistors are simulated. The channel crystalline direction can be chosen along either x- direction (armchair direction) or y-direction (zigzag direction).

[1] L. Lie, S. Kumar, Y. Ouyang, and J. Guo, “Performance limits of monolayer transition metal dichalcogenide transistors, IEEE Trans. Electron Devices, 58, 3042 (2011).  https://arxiv.org/abs/1106.4362
[2] K. T. Lam, Z. Dong, and J. Guo, “Performance limits projection of black phosphorous field-effect transistors,” IEEE Electron Dev. Lett., 35, 963 (2014).  https://arxiv.org/abs/1407.2258
[3] M. Lundstrom and J. Guo, “Nanoscale transistors: device physics, modeling, and simulation,” Springer, 2006.
 

Researchers should cite this work as follows:

• Ning Yang, Tong Wu, Jing Guo (2021), "2DFET," https://nanohub.org/resources/2dfets. (DOI: 10.21981/MCT5-1694).

  BibTex | EndNote

1. 2D FET
2. 2D materials and devices
3. 2D Semiconductor
4. FET
5. nanoelectronics
6. simulator