SPICE Model of Graphene Nanoribbon FETs (GNRFET)

By Ying-Yu Chen1; Morteza Gholipour2; Artem Rogachev1; Amit Sangai1; Deming Chen1

1. University of Illinois at Urbana-Champaign 2. University of Tehran

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Abstract

This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the following publications:

[1] Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, and Deming Chen, “A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gateand Circuit-Level Delay and Power Analysis Under Process Variation,” IEEE Transactions on Nanotechnology, vol. 14, no. 6, Nov. 2015.

[2] M. Gholipour, Y.-Y. Chen, A. Sangai, N. Masoumi, and D. Chen, “Analytical SPICE-Compatible Model of Schottky-Barrier-type GNRFETs with Performance Analysis,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 2, pp. 650-663, Feb. 2016.

[3] Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis Under Process Variation. IEEE/ACM Design, Automation & Test in Europe, pp. 1789-1794.

[4] M. Gholipour, Y-Y. Chen, A. Sangai, and D. Chen, “Highly Accurate SPICE-Compatible Modeling for Single- and Double-Gate GNRFETs with Studies on Technology Scaling,” Proceedings of IEEE/ACM Design, Automation & Test in Europe (DATE), Dresden, Germany, March 2014.

 

Sponsored by

This work is partially supported by NSF.

Publications

[1] Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, and Deming Chen, “A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gateand Circuit-Level Delay and Power Analysis Under Process Variation,” IEEE Transactions on Nanotechnology, vol. 14, no. 6, Nov. 2015.

[2] M. Gholipour, Y.-Y. Chen, A. Sangai, N. Masoumi, and D. Chen, “Analytical SPICE-Compatible Model of Schottky-Barrier-type GNRFETs with Performance Analysis,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 2, pp. 650-663, Feb. 2016.

Cite this work

Researchers should cite this work as follows:

  • Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen (2013), "SPICE Model of Graphene Nanoribbon FETs (GNRFET)," https://nanohub.org/resources/17074.

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Tags

  1. circuits
  2. Circuit Simulation
  3. Compact Model
  4. device modelling and simulation
  5. FET
  6. GNR
  7. GNRFET
  8. graphene
  9. graphene based FET
  10. graphene nanoribbons
  11. model
  12. NCN Group - Circuits
  13. SPICE