SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

Y-Y. Chen, M. Gholipour, and D. Chen, “Flexible Transition Metal Dichalcogenide Field-Effect Transistors: A Circuit-Level Simulation Study of Delay and Power under Bending, Process Variation, and Scaling,” IEEE/ACM Asia and South Pacific Design Automation Conference, Jan. 2016.

Researchers should cite this work as follows:

• Morteza Gholipour, Ying-Yu Chen, Deming Chen (2016), "Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model," https://nanohub.org/resources/23426.

  BibTex | EndNote

1. Circuit Simulation
2. FET
3. SPICE
4. TMDFET Model