Carbon nanotube (CNT) field-effect transistors (FETs) are promising candidates for future analog high-frequency (HF) applications, such as communication systems, due to the excellent intrinsic properties of CNTs. High carrier mobility, high carrier saturation velocity, good thermal stability and especially the inherent linearity of CNTFETs make them very attractive for analog applications. Linearity, i.e. a linear dependence of the output current on the input voltage, is a unique fundamental property of devices in which the current flow is restricted to one dimension. CNTs belong to this group of so called one-dimensional materials. At the circuit level, the device linearity should lead to very high spectral efficiencies, i.e. allowing higher data rates without the need for increased bandwidths.

The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model allows us to predict the apparent linearity seen in non-pulsed AC measurements of trap-affected CNTFETs. In contrast to the inherent linearity mentioned above, this apparent linearity is a result of trapping processes and cannot be exploited in circuits for e.g. mobile communication systems.