Sending report ...Topics: The NEGF Approach to Nano-Device Simulation
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| Author(s) | Supriyo Datta |
|---|---|
| Last Modified | 15 May, 2008 |
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Table of Contents
The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Learn more about the NEGF approach from the resources available on this site, listed below.
Tutorial Papers
- S. Datta, “Nanoscale Device Simulation: The Green’s Function Method,” Superlattices and Microstructures, 28, 253-278 (2000).
- S. Datta, “Non-Equilibrium Green’s Function (NEGF) Formalism: An elementary Introduction,” Proceedings of the International Electron Devices Meeting (IEDM), IEEE Press (2002). (preprint)-
- S. Datta, “Electrical resistance: an atomic view,” Nanotechnology, 15, S433-S451 (2004). (preprint)
- M. P. Anantram, M. S. Lundstrom and D. E. Nikonov, “Modeling of Nanoscasle Devices,” http://arxiv.org/abs/cond-mat/0610247v2 (2007). (preprint)-
- M. Paulsson, “Non Equilibrium Green’s Functions for Dummies: Introduction to the One Particle NEGF equations,” arXiv.org cond-mat/0610247 (2002). (preprint)-
- E. Polizzi, and S. Datta, “Multidimensional Nanoscale device modeling: the Finite Element Method applied to the Non-Equilibrium Green’s Function formalism,” IEEE-NANO 2003. Third IEEE Conference on Nanotechnology, 2, 40-43 (2003). (preprint)-
- A. P. Jauho, “Introduction to the Keldysh nonequilibrium Green function technique,” (online copy)-
Online Seminars
- Datta: Concepts of Quantum Transport (4 part lecture)
- Datta: Nanodevices: A Bottom-up View
- Klimeck: NEMO 1-D: The First NEGF-based TCAD Tool and Network for Computational Nanotechnology
- Klimeck: Numerical Aspects of NEGF: The Recursive Green Function Algorithm
Simulators
- NanoMOS: 2-D simulator for thin body (< 5 nm), fully depleted, double-gated n-MOSFETs.
- TBGreen: Compute transmission/reflection coefficients in a T-structure.
- Huckel-IV: Compute current-voltage (I-V) characteristics and conductance spectrum (G-V) of a molecule sandwiched between two metallic contacts.
Research Publications
NEGF simulation of semiconductor devices at the tight binding or Huckel level:
- R. C. Bowen, G. Klimeck, R. Lake, W. R. Frensley and T. Moise,, “Quantitative Resonant Tunneling Diode Simulation,” J. Appl. Phys., 81, 3207, 1997.
- R. Lake, G. Klimeck, R. C. Bowen and D. Jovanovic, “Single and multiband modeling of quantum electron transport through layered semiconductor devices,” J. Appl. Phys., 81, 7845, 1997.
- J. Guo, S. Datta, M.S. Lundstrom and M.P. Anantram, “Towards Multiscale Modeling of Carbon Nanotube Transistors,” International J. >(online copy)-
- Ramesh Venugopal, “Modeling Quantum Transport in Nanoscale Transistors,” Ph.D. Thesis, Purdue University, August 2003. copy)-
- Jing Guo, “Carbon Nanotube Electronics: Modeling and Physics,” Ph.D. Thesis, Purdue University, August 2004. copy)-
- Jing Wang, “Device Physics and Simulation of Silicon Nanowire Transistors,” Ph.D. Thesis, Purdue University, August 2005. (online copy)-
- M. Luisier, “Quantum Transport for Nanostructures,” (2005) (preliminary technical report)-
Online Classes
Downloads
- Datta: Scripts for “Quantum Transport: Atom to Transistor” (Matlab)
- Koswatta/Nikonov: MOSCNT: Code for Carbon Nanotube Transistor Simulation (Matlab)
- Nikonov: Scripts for “Recursive Algorithm for NEGF” (Matlab)
- NanoMOS source code
Standard References
Most device simulation is based on models that neglect interactions or at best treat them to first order, for which simple treatments are adequate. But here are a few standard references and review articles on the NEGF formalism all of which are based on the use of advanced concepts like the “Keldysh contour”, which are needed for a systematic treatment of higher order interactions.
Infinite homogeneous media:
- Martin, P. C. and Schwinger, J., “Theory of many-particle systems,” Phys. Rev. 115, 1342, 1959.
- Kadanoff, L. P. and Baym, G., Quantum Statistical Mechanics, Frontiers in Physics Lecture Note Series, WA Benjamin, New York, 1962, now published by Perseus Books, ISBN: 020141046X
- Keldysh, L. V., “Diagram technique for non-equilibrium processes,” Sov. Phys. JETP, 20, 1018, 1965.
- Danielewicz, P., “Quantum theory of non-equilibrium processes,” Ann. Phys., 152, 239, 1984.
- Rammer, J. and Smith, H., “Quantum field-theoretical methods in transport theory of metals,” Rev. Mod. Phys., 58, 323, 1986.
- Mahan, G. D., “Quantum transport equation for electric and magnetic fields,” Phys. Rep, 145, 251, 1987.
- Khan, F. S., Davies, J. H. and Wilkins, J. W., “Quantum transport equations for high electric fields,” Phys. Rev. B, 36, 2578, 1987.
Finite structures: Many authors have applied the NEGF formalism to problems involving finite structures.
- E.V. Anda and F. Flore, “The role of inelastic scattering in resonant tunneling heterostructures,” J. Phys. Cond. Matt., 3, 9087, 1991.
- C. Caroli, R. Combescot, P. Nozieres and D. Saint-James, “A direct calculation of the tunneling current: IV. Electron-phonon interaction effects,” J. Phys. C: Solid State Physics, 5, 21, 1972.
- Y. Meir and N.S. Wingreen, “Landauer Formula for the Current through an Interaction Electron Region,” Phys. Rev. Lett., 68, 2512, 1992.
- S. Datta, “A simple kinetic equation for steady-state quantum transport,” J. Phys. Cond. Matt., 2, 8023, 1990.
- A.P. Jauho, N.S. Wingreen and Y. Meir, “Time-dependent transport in interacting and non-interacting resonant tunneling systems,” Phys. Rev. B, 50, 5528, 1994.
- H. Haug and A.P. Jauho, Quantum Kinetics in Transport and Optics of Semiconductors, Springer, Berlin, 1996, ISBN: 3540616020