Online Simulation

And More

Top 25 Tags (all tags)

  1. 0
  2. ACUTE
  3. algorithms
  4. aqme
  5. carbon nanotubes
  6. circuits
  7. course lecture
  8. cyberinfrastructure
  9. devices
  10. education/outreach
  11. experiments
  12. material science
  13. molecular electronics
  14. nano/bio
  15. nanobio applications
  16. nano electro-mechanical systems
  17. nanoelectronics
  18. nanomedicine
  19. nanophotonics
  20. nano-transistors
  21. NEGF
  22. quantum dots
  23. quantum transport
  24. research seminar
  25. tutorial

Other

Trouble Report

For immediate assistance browse through our support center. You can find answers to many questions in just a few minutes.

If still experiencing problems, send us a report.

Sending report ...

Modeling of Nanoscale Devices

This resource has a 8.1 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Last 12 Months: updated 01 Oct, 2008
Users: 94
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

94 users

0 reviews (Review this)

0 citations

Download (PDF, 612.05 Kb)

Contributor(s) M. P. Anantram
NASA

Mark Lundstrom
Purdue University, West Lafayette

Dmitri Nikonov
Intel Corporation
Abstract We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and atomistically. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices are between diffusive and phase coherent. We introduce the non equilbrium Green's function (NEGF) approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of layered structures such as nanotransistors, carbon nanotubes and nanowires. An application of the NEGF method in the ballistic and scattering limits to silicon nanotransistors is discussed.
Cite this work

If you reference this work in a publication, please cite as follows:

    M. P. Anantram, M. S. Lundstrom and D. E. Nikonov, "Modeling of Nanoscasle Devices," arXiv.org cond-mat/0610247 (2005).
  • Anantram, M. P.; Lundstrom, Mark; Nikonov, Dmitri (2006), "Modeling of Nanoscale Devices," http://www.nanohub.org/resources/1902/.

    BibTex | EndNote

Date posted 19 Oct, 2006
Type Publications
Tags

Citations

The following are publications that have cited this resource, separated by their affiliation to the NCN.

No citations found.

Reviews

The following are reviews of this resource from other site members.

Write a review

No reviews found. Be the first to review this resource!

People who looked at this also looked at:

Network Recommendations powered by CIKNOW developed by the Science of Networks in Communities Research (SONIC) group at Northwestern University.

Recommendations will load momentarily. If you do not see content change after 30 seconds, there may be a number of reasons:

  • You have javascript turned off in your browser.
  • You have browser incapable of handling the scripts that load the recommendations.
  • There is a problem with the recommendation service and it failed to respond.