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Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism

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Last 12 Months: updated 01 Oct, 2008
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Contributor(s) Eric Polizzi
University of Massachusetts, Amherst

Supriyo Datta
Purdue University, West Lafayette
Abstract This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using the finite element method (FEM). In this approach, the derivation of the boundary conditions at the interfaces of the device with the reservoirs, is used to calculate the self-energy functions. The FEM allows us to consider very complex geometries and non-uniform mesh, while the NEGF is a powerful formalism which will allow to include scattering in the problem. The simulations are performed by solving self-consistently the NEGF (equivalent to the open schrodinger equation in ballistic regime) for the transport problem and the Poisson equation to account for the space charge effects.
Cite this work

If you reference this work in a publication, please cite as follows:

    E. Polizzi, and S. Datta, "Multidimensional Nanoscale device modeling: the Finite Element Method applied to the Non-Equilibrium Green's Function formalism," IEEE-NANO 2003. Third IEEE Conference on Nanotechnology, 2, 40-43 (2003).

  • Polizzi, Eric; Datta, Supriyo (2006), "Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism," http://www.nanohub.org/resources/1935/.

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Date posted 31 Oct, 2006
Type Publications
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  1. 4.0 out of 5 stars 

    Posted on 31 October, 2006 by Xue-Feng Zhang

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