A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann Transport Equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10nm double gate MOSFETs are presented.

Researchers should cite this work as follows:

• Z. Ren, R. Venugopal, S. Goasguen, S. Datta and M. S. Lundstrom, "nanoMOS 2.5: A Two-Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," IEEE Trans. Electron. Dev., special issue on Nanoelectronics, 50, 1914-1925, 2003.

• Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom (2006), "nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," https://nanohub.org/resources/1875.

  BibTex | EndNote

1. MOSFET
2. nanoelectronics
3. NEGF