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Nanoscale MOSFETs: Physics, Simulation and Design

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Contributor(s) Zhibin Ren
Purdue University, West Lafayette
Abstract This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided design) tool for quantum level device simulation, 3) examination and assessment of new features of carrier transport in nano-scale transistors, and 4) exploration of device design issues near the ultimate scaling limit with the help of the developed tools. We concentrate on the technical issues by investigating a double-gate structure, which has been widely accepted as the ideal device structure for ultimate CMOS scaling. We focus on quantum effects and non-equilibrium, near-ballistic transport in extremely scaled transistors (in contrast to quasi-equilibrium, scattering-dominant transport in long channel devices), where a non-equilibrium Green’s function formalism (NEGF) has been used to deal with the quantum transport problem.
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If you reference this work in a publication, please cite as follows:

    Ren, Zhibin. Ph.D., Purdue University, October 2001. Nanoscale MOSFETs: Physics, Simulation, and Design. Major Professor: Mark S. Lundstrom.
  • Ren, Zhibin (2006), "Nanoscale MOSFETs: Physics, Simulation and Design," http://www.nanohub.org/resources/1917/.

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Date posted 26 Oct, 2006
Type Publications
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