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  1. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

    Online Presentations | 01 Nov 2016 | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

    IWCE 2015 presentation.

  2. 2DFET

    Tools | 18 Feb 2021 | Contributor(s):: Ning Yang, Tong Wu, Jing Guo

    Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.

  3. how to simulate insulator in a GNRFET with matlab?

    Q&A|Closed | Responses: 0

    I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...

    https://nanohub.org/answers/question/1583

  4. What simulation for simulating CNTFET as biosensor applications ?

    Q&A|Closed | Responses: 0

    I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate Oxide...

    https://nanohub.org/answers/question/804

  5. A Z M Nowzesh Hasan

    https://nanohub.org/members/183710

  6. A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

    Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser

    We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...

  7. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    Tools | 16 Jul 2008 | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  8. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    https://nanohub.org/members/38550

  9. Band Structure Lab Demonstration: Bulk Strain

    Animations | 03 Jun 2009 | Contributor(s):: Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

  10. CNT Mobility

    Tools | 26 Apr 2009 | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop

    Simulate field effect carrier mobility in back-gated CNTFET devices at low field

  11. Device Physics and Simulation of Silicon Nanowire Transistors

    Papers | 27 Jun 2013 | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  12. ECE 612 Lecture 26: Heterostructure FETs

    0.0 out of 5 stars 

    Online Presentations | 10 Dec 2008 | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

  13. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model

    0.0 out of 5 stars 

    Downloads | 08 Feb 2016 | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen

    SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

  14. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    07 Apr 2016 | Compact Models | Contributor(s):

    By Morteza Gholipour1, Deming Chen2

    1. Babol University of Technology 2. University of Illinois at Urbana-Champaign

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

    https://nanohub.org/publications/134/?v=1

  15. George Kubas

    Under Graduate Degree- Chemical Engineer at YSUCurrently in PhD. Program for Materials Science

    https://nanohub.org/members/99735

  16. GFET

    Groups

    https://nanohub.org/groups/graphenee

  17. GFET Tool

    0.0 out of 5 stars 

    Tools | 20 May 2011 | Contributor(s):: Eric Pop, Feifei Lian

    Simulate the electrical and thermal properties of a graphene field-effect transistor.

  18. High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling

    0.0 out of 5 stars 

    Online Presentations | 19 Nov 2014 | Contributor(s):: Martin Claus

    The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...

  19. Hongsik Jeong

    https://nanohub.org/members/108815

  20. Lecture 6: Quantum Transport in Nanoscale FETs

    5.0 out of 5 stars 

    Online Presentations | 12 Sep 2008 | Contributor(s):: Mark Lundstrom

    The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...