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Essential Physics of the Ultimate MOSFET and the Next 20 Years of Semiconductor Technology
Online Presentations | 18 Mar 2024 | Contributor(s):: Mark Lundstrom
My goal in this talk is to discuss the operation of these devices in a simple but physically sound way. A broader goal of my talk is to discuss how semiconductor technology will meet the insatiable appetite that artificial intelligence has for more computing, more memory, and faster communication.
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SCALE Total Ionizing Dose Response Mechanisms in a 12-nm FinFET Technology
Online Presentations | 21 Feb 2024 | Contributor(s):: Hugh Barnaby
This talk was also presented at the 2024 Microelectronics Reliability and Qualification Workshop, The Aerospace Corporation, El Segundo, CA, February, 6, 2024.
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Moore's Law and Radiation Effects on Microelectronics
Online Presentations | 03 Oct 2023 | Contributor(s):: Daniel M. Fleetwood
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CMOS+X: Integrated Ferroelectric Devices for Energy Efficient Electronics
Online Presentations | 09 Dec 2022 | Contributor(s):: Sayeef Salahuddin
In this talk, I shall briefly present how integrated ferroelectric devices offer a new pathway in this context. First, I shall discuss the phenomenon of negative capacitance in ferroelectric materials. A fundamentally new state in the ferroelectrics, negative capacitance promises to reduce...
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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
Online Presentations | 15 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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A Phase-Changing Oxide for PS Silicon Photonics
Online Presentations | 03 Nov 2016 | Contributor(s):: Richard Haglund
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Advanced CMOS Device Physics for 7 nm and Beyond
Presentation Materials | 16 Dec 2015 | Contributor(s):: Scott Thompson
This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device, material, and economical challenges remain. This tutorial will target understanding key device concepts for...
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Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
Presentation Materials | 14 Dec 2015 | Contributor(s):: Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
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Green Light on Germanium
Online Presentations | 02 Nov 2015 | Contributor(s):: peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...
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Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?
Online Presentations | 30 Oct 2015 | Contributor(s):: Suman Datta
In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.
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Device Options and Trade-offs for 5 nm CMOS Technology Seminar Series
Series | 05 Oct 2015 | Contributor(s):: Mark Lundstrom
Today's CMOS technology is so-called 14-nm technology. 10 nm technology development is well underway, and 7 nm has begun. It will soon be time to select a technology for the 5 nm node. To help understand the device options, what each on promises, what the challenges and trade-offs are,...
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Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs
Online Presentations | 05 Oct 2015 | Contributor(s):: Juses A. del Alamo
This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.
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Design and Compact Modeling of CMOS-MEMS Resonant Body Transistors
Online Presentations | 10 Jun 2014 | Contributor(s):: Dana Weinstein, Luca Daniel, Bichoy W. Bahr
This talk presents the latest results of the CMOS Resonant Body Transistor (RBT) fabricated in standard 32nm SOI CMOS. Using phononic crystals formed from the CMOS stack, we will discuss methods for 10x improvement of Q and suppression of spurious modes.
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RF Solid-State Vibrating Transistors
Online Presentations | 15 Feb 2014 | Contributor(s):: Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...
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Computational and Experimental Study of Transport in Advanced Silicon Devices
Papers | 28 Jun 2013 | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
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Course on Beyond CMOS Computing
Teaching Materials | 06 Jun 2013 | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
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Carbon-Based Nanoswitch Logic
Online Presentations | 28 Mar 2013 | Contributor(s):: Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...
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Uniform Methodology of Benchmarking Beyond-CMOS Devices
Online Presentations | 31 Oct 2012 | Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...
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In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
Online Presentations | 06 Jun 2012 | Contributor(s):: Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered is...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra