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A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
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The Development and Use of Dopants to Modulate the Electrical Properties of Conjugated Polymers
Online Presentations | 05 Feb 2019 | Contributor(s):: Seth R. Marder
In this talk we will report on recent developments pertaining to surface modifiers and both n‐ and p‐dopants that could impact the charge injection/collection processes in organic light emitting diodes, organic field effect transistors, and organic photovoltaic and hybrid organic/inorganic...
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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
Online Presentations | 01 Nov 2016 | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
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High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling
Online Presentations | 14 Jan 2015 | Contributor(s):: Martin Claus
The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...
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ECE 612 Lecture 26: Heterostructure FETs
Online Presentations | 10 Dec 2008 | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
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Lecture 6: Quantum Transport in Nanoscale FETs
Online Presentations | 12 Sep 2008 | Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...