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IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

By Hyeongu Lee¹; SeongHyeok Jeon¹; Cho Yucheol¹; Mincheol Shin¹

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea

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Supporting Docs