Chapter 1: A Primer MOSCap Tool on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s): Abdussamad Ahmed Muntahi, Shaikh S. Ahmed
The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...
Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s): Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
Monte Carlo HEMT Simulator
Tools | 12 Nov 2021 | Contributor(s): Shaikh S. Ahmed, Mohammad Zunaidur Rashid, Khadija Abul Khair
Simulates the current-voltage (I-V) and related characteristics of a nitride-based HEMT device using the 3-D particle-based Monte Carlo approach.
Monte Carlo Phonon Transport Simulator
Tools | 30 Aug 2017 | Contributor(s): Mohammad Zunaidur Rashid, Sasi Sekaran Sundaresan, Shaikh S. Ahmed
Calculates thermal conductivity of semiconductors by solving the Boltzmann transport equation via particle-based Monte Carlo method
GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
Online Presentations | 24 Nov 2015 | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
nanoHUB@SIU: Pedagogy and Beyond
Online Presentations | 31 Aug 2015 | Contributor(s): Shaikh S. Ahmed
As a postdoctoral researcher at NCN, during the years 2005-7, in addition to usual research activities, I was tasked with working closely with the nanoHUB Team to augment a few pre-existing quantum device simulators, create rappturized user interfaces, and run end-to-end simulations for...
Multiscale Modeling of Thermoelectric Cooler
Tools | 17 Dec 2014 | Contributor(s): Allison Anne Campbell, Mohammad Zunaidur Rashid, afsana sharmin, Shaikh S. Ahmed
This tool simulates a practical thermoelectric cooler unit with atomistic models
Nanoscale Solid-State Lighting Device Simulator
Tools | 18 May 2012 | Contributor(s): Shaikh S. Ahmed, Vinay Uday Chimalgi, Katina Mattingly, krishna kumari Yalavarthi, Rezaul Karim Nishat
Simulates the electronic and optical properties of nanoscale solid-state lighting devices in III-N material systems
Monte Carlo Electron Dynamics
0.0 out of 5 stars
Tools | 21 Aug 2008 | Contributor(s): Shaikh S. Ahmed, Zichang Zhang, Khadija Abul Khair, Sharnali Islam, Mohammad Zunaidur Rashid
Simulates non-stationary electron transport in emerging semiconductors using Monte Carlo approach. Models how particle distribution function evolves in time and allows the user to extract velocity-field and mobility characteristics.
Examples for QuaMC 2D particle-based device Simulator Tool
Online Presentations | 10 May 2008 | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
Why QuaMC 2D and Particle-Based Device Simulators?
Online Presentations | 02 May 2008 | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We describe the need for particle-based device simulators when modeling nanoscale devices.
Particle-Based Device Simulators Description
5.0 out of 5 stars
Online Presentations | 28 Apr 2008 | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
In this presentation we give an overview of partcle-based device simulations with focus on implementation details.
Modeling Coulomb Effects in Nanoscale Devices
Online Presentations | 26 Apr 2008 | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, David K. Ferry
We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D....
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part II - Applications
Papers | 14 Jan 2008 | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in...
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks
Papers | 14 Jan 2008 | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of...
NanoMOS
3.5 out of 5 stars
Tools | 19 May 2006 | Contributor(s): , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
Quantum Point Contact
Tools | 18 May 2006 | Contributor(s): Richard Akis, Shaikh S. Ahmed, Mohammad Zunaidur Rashid, Richard Akis
Simulates the conductance and associated wavefunctions of Quantum Point Contacts.
MOSCap
Tools | 06 Apr 2006 | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
MOSFet
4.5 out of 5 stars
Tools | 30 Mar 2006 | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
Schred
Tools | 30 Mar 2006 | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
QuaMC2D
Tools | 13 Mar 2006 | Contributor(s): Shaikh S. Ahmed, Dragica Vasileska
Quantum-corrected Monte-Carlo electron transport simulator for two-dimensional MOSFET devices.
CNTFET Lab
3.0 out of 5 stars
Tools | 13 Mar 2006 | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
NanoFET
Tools | 13 Mar 2006 | Contributor(s): M. P. Anantram, Shaikh S. Ahmed, alexei svizhenko, Derrick Kearney, Gerhard Klimeck
Simulates ballistic transport in 2D MOSFET devices
FETToy
Tools | 14 Feb 2006 | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs