GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations

By Rezaul Karim Nishat1; S. Alqahtani1; Ye Wu1; Vinay Uday Chimalgi1; Shaikh S. Ahmed1

1. Southern Illinois University Carbondale

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Abstract

IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. the microscopically determined transition parameters were then incorporated into a TCAD LED simulator to obtain the device terminal characteristics. the m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (iqe) characteristic.

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Researchers should cite this work as follows:

  • Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed (2015), "GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations," https://nanohub.org/resources/23139.

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North Ballroom, PMU, Purdue University, West Lafayette, IN

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  1. nanoelectronics