AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology. The Monte Carlo HEMT Simulator (HEMT 3-D)  simulates GaN based HEMT devices using an atomistically-enhanced 3-D particle-based Monte Carlo simulation platform.  The simulator employs several computational kernels to accomplish the goals: a) a 3-D Poisson solver for long-range force calculation, b) electron dynamics routines for the calculator of short-range Coulombic forces. This kernel has been benchmarked against a FMM solver, c) scattering routine includes acoustic, optical, polar optical, and surface roughness processes, d) size-quantization effects have been accounted for via a parameter-free effective potential scheme, e) the effective mass and the internal polarization induced interfacial charge density can be obtained atomistically using a tight-binding model. Details of these and other related models have been published in the following technical journals. Besides III-N materials, the parent simulator has the capability of simulating devices based on, among many, newly introduced Ga₂O₃ and MoS₂ materials. Future plan includes benchmarking of the simulator against available experimental data.

QuADS 3-D

This work was mainly supported by the U.S. National Science Foundation Grant No 1610474. 

1. Mohammad Rashid and Shaikh Ahmed, “Lattice Thermal Conductivity in Nanowires: Coupling the Bechmann-Kirchhoff Boundary Scattering Model with a Monte Carlo Framework,” IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 10, no. 4, pp. 590–598, 2020.

2. Zichang Zhang, Ye Wu, and Shaikh Ahmed, “First-Principles Calculation of Electronic Structure and Polarization in ε-Ga2O3 within GGA and GGA+U Frameworks,” Mater. Res. Express, vol. 6, 125904, November 2019.

3. Khadija A. Khair and Shaikh S. Ahmed, “Strain-Dependent Polar Optical Phonon Scattering and Drive Current Optimization in Nanoscale Monolayer MoS₂ FETs,” Electronic Material Letters, vol. 16, no. 3, pp. 299–309, 2020.

4. Ye Wu, Zi-Chang Zhang, and Shaikh Ahmed, “First-Principles Investigation of Size-Dependent Piezoelectric Properties of Bare ZnO and ZnO/MgO Core-Shell Nanowires,” Superlattices and Microstructures, vol. 120, p. 732-737, 2018.

5. Zi-Chang Zhang, Ye Wu, Chao Lu, and Shaikh Ahmed, “Electron Mobility in β-Ga2O3: Role of Polar Optical Phonon Scattering,” Applied Physics A, vol. 124, no. 9, pp. 637, 2018.

6. Mohammad Z. Rashid and Shaikh S. Ahmed, “Lattice Thermal Conductivity Reduction Due to Diffusive Boundary Scattering in Nanowires,” IEEE-NMDC 2018, Proc. of 13^th Nanotechnology Materials & Devices Conference, pp. 1-4, 2018.

7. Zi-Chang Zhang, Ye Wu, Chao Lu and Shaikh S. Ahmed, “Electronic Structure and Carrier Transport Analysis in β-Ga2O3 Using a Two-Valley Ensemble Monte Carlo Framework,” IEEE-NMDC 2018, Proc. of 13^th Nanotechnology Materials & Devices Conference, pp. 1-4, 2018.

8. .Shaikh Ahmed, Mohammad Rashid, Saad Al-Qahtani, Md Rezaul Karim Nishat, Khadija Khair, Ye Wu, Abdussamad Muntahi, Mayada Taher and Abdulmuin Abdullah, “Multiscale and Multiphysics Modeling of Non-Classical Semiconductor Devices,” ICECE 2016, Proc. of 9^th Int. Conference on Electrical and Computer Engineering, Dhaka, Bangladesh, December 2016. 

Researchers should cite this work as follows:

• Shaikh S. Ahmed, Mohammad Zunaidur Rashid, Khadija Abul Khair (2022), "Monte Carlo HEMT Simulator," https://nanohub.org/resources/hemt3d. (DOI: 10.21981/YCTC-SJ75).

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1. AlGaN HEMT
2. atomistic modeling and simulation
3. Monte Carlo