This simulator simulates non-stationary electron transport in emerging semiconductors including beta gallium oxide using Monte Carlo approach. It is useful to study how particle distribution function evolves in time and allows the user to extract velocity-field and mobility characteristics. A model for surface roughness, based on Ando's formalism, has also been included into the simulator. We will keep adding new materials in the coming days.

nano@SIUC group members and Dragica Vasileska

NSF and SIU  

1. Dragica Vasileska , Katerina Raleva , Stephen M. Goodnick , Christian Ringhofer, Shaikh S. Ahmed , Nabil Ashraf , Arif Hossain , Raghuraj Hathwar, Ashwin Ashok, and Balaji Padmanabhan, "Monte Carlo Device Simulations,"  available at: https://nanohub.org/resources/10579/download/Monte_Carlo_Device_Simulations_with_References_Kate.pdf
2. Dragica Vasileska and Stephen M. Goodnick, "Bulk Monte Carlo Code Described," available at: https://nanohub.org/resources/4844/download/montecarlocodedescribed.pdf
3. M. Lundstrom, Fundamentals of carrier transport. Cambridge University Press, 2009.
4. Shaikh Ahmed, et al., “Quantum Atomistic Simulations of Nanoelectronic Devices using QuADS,” Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling, Springer, Book Edited by D. Vasileska and S. M. Goodnick, pp. 405, 2011.
5. D. K. Ferry and H. L. Grubin, “Modeling of quantum transport in semiconductor devices,” Solid State Phys., vol. 49, pp. 283–448, 1995.
6. T. Ando, A. B. Fowler and F. Stern, "Electronic properties of two-dimensional systems", Reviews of Modern Physics, vol. 54, pp. 437-672, 1982.

Researchers should cite this work as follows:

• Shaikh S. Ahmed, Zichang Zhang, Khadija Abul Khair, Sharnali Islam, Mohammad Zunaidur Rashid (2021), "Monte Carlo Electron Dynamics," https://nanohub.org/resources/mcbulk. (DOI: 10.21981/DBY8-7Q46).

  BibTex | EndNote

1. Monte Carlo
2. nanoelectronics