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FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides – The Path to Wafer-scale Single Crystal Monolayers
Online Presentations | 20 May 2021 | Contributor(s):: Joan Redwing
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FDNS21: Revealing the Full Spectrum of 2D Materials with Superhuman Predictive Abilities
Online Presentations | 20 May 2021 | Contributor(s):: Evan Reed
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FDNS21: Van der Waals Epitaxy of Atomically Thin Metal Oxide
Online Presentations | 20 May 2021 | Contributor(s):: Lili Cai
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FDNS21: Disorder and Defects in van der Waals Heterostructures
Online Presentations | 11 May 2021 | Contributor(s):: Daniel A Rhodes
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FDNS21: Realizing 2D Transport in 2D Van der Waals Crystals
Online Presentations | 27 Apr 2021 | Contributor(s):: Jiwoong Park
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FDNS21: Artificial van der Waals Crystals
Online Presentations | 27 Apr 2021 | Contributor(s):: Cheol-Joo Kim
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nanoHUB MuGFET Tool Tutorial
Online Presentations | 05 Mar 2021 | Contributor(s):: Ashish anil Bait
This is a basic tutorial on how to use the nanohub MuGFET tool to simulate FinFET or double gate model free of cost.
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Short Channel Effects
Online Presentations | 05 Mar 2021 | Contributor(s):: Ashish anil Bait
Here are the all short channel effects that you require.
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Concept of FinFET Part-I
Online Presentations | 05 Mar 2021 | Contributor(s):: Ashish anil Bait
Here is the video introducing latest transistor technology used in processors.
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Concept of FinFET Part-II
Online Presentations | 05 Mar 2021 | Contributor(s):: Ashish anil Bait
Here is the video introducing latest transistor technology used in processors.
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A Single Atom Transistor: The Ultimate Scaling Limit – Entry into Quantum Computing
Online Presentations | 14 Oct 2020 | Contributor(s):: Gerhard Klimeck
50th European Solid-State Device Research Conference
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09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
Online Presentations | 14 Oct 2020 | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
Online Presentations | 21 Sep 2020 | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly
This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...
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A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
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05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
Online Presentations | 18 Sep 2020 | Contributor(s):: Shimeng Yu, Panni Wang
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
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12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications
Online Presentations | 18 Sep 2020 | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl
In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].
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All-optical Magnetization Switching Mediated by Laser-induced Spin Current
Online Presentations | 21 May 2020 | Contributor(s):: Satoshi Iihama
The manipulation of magnetization solely by the ultrashort laser pulse has attracted attention for future ultrafast and low-energy spintronics device [1-4]. GdFeCo has been predominant materials system showing all-optical single-shot magnetization switching. The magnetization switching of GdFeCo...
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Mechanical Exfoliation as a Route to Nanomanufacturing of 2D van der Waals Bonded
Online Presentations | 11 May 2020 | Contributor(s):: Daryl Chrzan
In this talk I present a mechanical exfoliation method able to reliably produce large patterned monolayer samples and place them with upon a substrate in desired locations. The method relies on the epitaxial strain imposed upon the layer to be exfoliated by the deposition of a thin metallic film.
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2D Valley-Spin Transport in Transition Metal Dichalcogenides
Online Presentations | 07 May 2020 | Contributor(s):: Zhihong Chen
In this talk, we first report that valley current can be electrically induced and detected through the valley Hall effect and inverse valley Hall effect, respectively, in monolayer molybdenum disulfide. We compare temperature and channel length dependence of non-local electrical signals in...