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09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
Online Presentations | 14 Oct 2020 | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
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Jul 20 2009
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...
https://nanohub.org/events/details/231
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2009 NCN@Purdue Summer School: Electronics from the Bottom Up
Workshops | 22 Sep 2009 | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
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2010 NCN Annual Review S13: External Education - Cal Poly Pomona
Online Presentations | 16 Jun 2010 | Contributor(s):: Tanya Faltens
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2011 NCN@Purdue Summer School: Electronics from the Bottom Up
Workshops | 20 Jul 2011
click on image for larger versionAlumni Discussion Group: LinkedIn
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39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
Online Presentations | 21 Sep 2020 | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly
This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...
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A Primer on Semiconductor Device Simulation
Online Presentations | 23 Jan 2006 | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor...
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A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Online Presentations | 13 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
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Abhijith Prakash
https://nanohub.org/members/35214
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Active Photonic Nanomaterials: From Random to Periodic Structures
Online Presentations | 06 Feb 2006 | Contributor(s):: Hui Cao
Active photonic nanomaterials, which have high gain or large nonlinearity, are essential to the development of nanophotonic devices and circuits. In this talk, I will provide a review of our recent research activities related to the fabrication of active photonic nanomaterials and the development...
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All-Spin Logic Devices
Online Presentations | 08 Feb 2010 | Contributor(s):: Behtash Behinaein
We propose a spintronic device that uses spin at every stage of its operation: input and output information are represented by the magnetization of nanomagnets which communicate through spin-coherent channels. Based on simulations with an experimentally benchmarked model we argue that the device...
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An Electrical Engineering Perspective on Molecular Electronics
Online Presentations | 26 Oct 2005 | Contributor(s):: Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of...
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Analysis of DC Electrical Conductivity Models of Carbon Nanotube-Polymer Composites with Potential Application to Nanometric Electronic Devices
Papers | 09 Mar 2013 | Contributor(s):: Rafael Vargas-Bernal, Gabriel Herrera-Pérez, Ma. Elena Calixto-Olalde, Margarita Tecpoyotl-Torres
The design of nanometric electronic devices requires novel materials for improving their electrical performance from stages of design until their fabrication. Until now, several DC electrical conductivity models for composite materials have been proposed. However, these models must be valued to...
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Ashish Agrawal
https://nanohub.org/members/28577
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Ashutosh Manohar
https://nanohub.org/members/128102
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Atomic Force Microscopy
Online Presentations | 01 Dec 2005 | Contributor(s):: Arvind Raman
Atomic Force Microscopy (AFM) is an indispensible tool in nano science for the fabrication, metrology, manipulation, and property characterization of nanostructures. This tutorial reviews some of the physics of the interaction forces between the nanoscale tip and sample, the dynamics of the...
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Atomistic Alloy Disorder in Nanostructures
Online Presentations | 26 Feb 2007 | Contributor(s):: Gerhard Klimeck
Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and discrete states. But what if the material is fundamentally disordered? What if the disorder is at the...
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Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
Online Presentations | 16 Dec 2010 | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...
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Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
Online Presentations | 22 Sep 2016 | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
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Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
Online Presentations | 08 Mar 2019 | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.