Tags: nano-transistors
Resources
Tools
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10.0 Ranking Anantram: nanoFET Lab
nanoFET Lab
Type Tools Contributor(s) M. P. Anantram, Shaikh S. Ahmed, Alexei Svizhenko, Derrick Kearney, Gerhard Klimeck Date 09 Feb. 2007 Avg. Rating (0) Rate this Simulates quantum ballistic transport properties in two-dimensional MOSFET devices
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10.0 Ranking Wang: NanoWire
NanoWire
Type Tools Contributor(s) Jing Wang, Eric Polizzi, Clemens Heitzinger, Gerhard Klimeck, Saumitra Raj Mehrotra, Ben Haley Date 19 May. 2006 Avg. Rating (4) Rate this Simulate electron transport in 3D through nanowires in the effective mass approximation subject to 3D Poisson solution
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10.0 Ranking Luisier: Bandstructure Lab
Bandstructure Lab
Type Tools Contributor(s) Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom Date 19 May. 2006 Avg. Rating (3) Rate this Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
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9.8 Ranking Rahman: FETToy
FETToy
Type Tools Contributor(s) Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom Date 14 Feb. 2006 Avg. Rating (7) Rate this Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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9.7 Ranking Vasileska: Schred
Schred
Type Tools Contributor(s) Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck, Mark Lundstrom Date 09 Feb. 2006 Avg. Rating (4) Rate this Calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure
- 9.2 Ranking Padre
Online Presentations
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10.0 Ranking Snider: Nanoelectronic Architectures
Nanoelectronic Architectures
Type Online Presentations Contributor(s) Greg Snider Date 28 Aug. 2006 Avg. Rating (1) Rate this Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using ...
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10.0 Ranking Lundstrom: Moore's Law Forever?
Moore's Law Forever?
Type Online Presentations Contributor(s) Mark Lundstrom Date 10 Aug. 2005 Avg. Rating (4) Rate this In 1965, Gordon Moore observed that the number of transistors on a silicon chip doubled every technology generation (12 months at that time, currently 18-24 months). He predicted that this trend would continue for a while. Forty years later, Moore's Law continues to hold. Since the number of ...
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10.0 Ranking Shalaev: Plasmonic Nanophotonics: Coupling ...
Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons
Type Online Presentations Contributor(s) Vladimir M. Shalaev Date 04 Oct. 2005 Avg. Rating (2) Rate this The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information technologies, which were formerly entirely electronic, are increasingly enlisting light to communicate and ...
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10.0 Ranking Lundstrom: Simple Theory of the Ballistic ...
Simple Theory of the Ballistic MOSFET
Type Online Presentations Contributor(s) Mark Lundstrom Date 19 Oct. 2005 Avg. Rating (2) Rate this Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but ...
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10.0 Ranking Liu: Nano-Scale Device Simulations ...
Nano-Scale Device Simulations Using PROPHET
Type Online Presentations Contributor(s) Yang Liu, Robert Dutton, Yang Liu Date 22 Jan. 2006 Avg. Rating (2) Rate this These two lectures are aimed to give a practical guide to the use of a general device simulator (PROPHET) available on nanoHUB. PROPHET is a partial differential equation (PDE) solver that offers users the flexibility of integrating new models and equations for their nano-device simulations. ...
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10.0 Ranking Sands: Nanotubes and Nanowires: ...
Nanotubes and Nanowires: One-dimensional Materials
Type Online Presentations Contributor(s) Timothy D. Sands Date 17 Jul. 2006 Avg. Rating (6) Rate this What is a nanowire? What is a nanotube? Why are they interesting and what are their potential applications? How are they made? This presentation is intended to begin to answer these questions while introducing some fundamental concepts such as wave-particle duality, quantum confinement, the ...
Courses
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9.8 Ranking Lundstrom: ECE 612 Nanoscale Transistors
ECE 612 Nanoscale Transistors
Type Courses Contributor(s) Mark Lundstrom Date 08 Aug. 2006 Avg. Rating (15) Rate this This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.
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9.4 Ranking Datta: Quantum Transport: Atom to ...
Quantum Transport: Atom to Transistor
Type Courses Contributor(s) Supriyo Datta Date 07 Aug. 2006 Avg. Rating (21) Rate this The development of "nanotechnology" has made it possible to engineer materials and devices on a length scale as small as several nanometers (atomic distances are ~ 0.1 nm). The properties of such "nanostructures" cannot be described in terms of macroscopic parameters like mobility and diffusion ...
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1.1 Ranking Curriculum on Nanotechnology
Curriculum on Nanotechnology
Type Courses Contributor(s) Date 27 Jan. 2005 Avg. Rating (1) Rate this The NCN seeks to bring the new understanding emerging from research in nanoscience into the graduate and undergraduate curriculum. We are now at the dawn of what might be a new era in technology, but to exploit the opportunities that nanoscience is giving us, engineers will need to learn how to ...
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0.0 Ranking Alam: Reliability Physics of Nanoscale ...
Reliability Physics of Nanoscale Transistors
Type Courses Contributor(s) Muhammad A. Alam Date 27 Nov. 2007 Avg. Rating (0) Rate this This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, we learn how to compute current through a device when a voltage is applied. However, as transistors are turned on and off trillions of times during the years of the ...
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0.0 Ranking Lundstrom: Carrier Transport at the Nanoscale
Carrier Transport at the Nanoscale
Type Courses Contributor(s) Mark Lundstrom Date 27 Nov. 2007 Avg. Rating (0) Rate this This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts, the course consists of four parts. Part 1 focuses on ballistic (and quasi-ballistic) transport both semiclassical and quantum. Part 2 treats ...
Learning Modules
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10.0 Ranking Lundstrom: Ballistic Nanotransistors
Ballistic Nanotransistors
Type Learning Modules Contributor(s) Mark Lundstrom Date 07 Dec. 2005 Avg. Rating (13) Rate this This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. This learning module introduces the ...
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5.8 Ranking Vasileska: Modeling Single and Dual-Gate ...
Modeling Single and Dual-Gate Capacitors using SCHRED
Type Learning Modules Contributor(s) Dragica Vasileska Date 31 Mar. 2006 Avg. Rating (0) Rate this SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description, ...
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5.7 Ranking Fodor: Introduction to Schred
Introduction to Schred
Type Learning Modules Contributor(s) James K Fodor, Jing Guo Date 28 Jun. 2007 Avg. Rating (0) Rate this This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...
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5.6 Ranking Fodor: Introduction to FETToy
Introduction to FETToy
Type Learning Modules Contributor(s) James K Fodor, Jing Guo Date 03 Jul. 2007 Avg. Rating (0) Rate this This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...
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5.6 Ranking Fodor: Introduction to nanoMOS
Introduction to nanoMOS
Type Learning Modules Contributor(s) James K Fodor, Jing Guo Date 02 Jul. 2007 Avg. Rating (0) Rate this This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...
Teaching Materials
- 10.0 Ranking Liu: Nano-Scale Device Simulations ...
- 10.0 Ranking Liu: Nano-Scale Device Simulations ...
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8.5 Ranking Klimeck: Semiconductor Device Education ...
Semiconductor Device Education Material
Type Teaching Materials Contributor(s) Gerhard Klimeck Date 28 Jan. 2008 Avg. Rating (2) Rate this When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, ...
- 2.6 Ranking Lundstrom: Exercises for FETToy
Animations
- 0.0 Ranking Bean: How Semiconductors and Transistors ...
Publications
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10.0 Ranking Wang: Device Physics and Simulation of ...
Device Physics and Simulation of Silicon Nanowire Transistors
Type Publications Contributor(s) Jing Wang Date 20 May. 2006 Avg. Rating (0) Rate this As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry ...
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10.0 Ranking Ren: Nanoscale MOSFETs: Physics, ...
Nanoscale MOSFETs: Physics, Simulation and Design
Type Publications Contributor(s) Zhibin Ren Date 26 Oct. 2006 Avg. Rating (0) Rate this This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer ...
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10.0 Ranking Guo: Carbon Nanotube Electronics: ...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
Type Publications Contributor(s) Jing Guo Date 30 Oct. 2006 Avg. Rating (3) Rate this In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ ...
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10.0 Ranking Venugopal: Modeling Quantum Transport in ...
Modeling Quantum Transport in Nanoscale Transistors
Type Publications Contributor(s) Ramesh Venugopal Date 30 Oct. 2006 Avg. Rating (0) Rate this As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new ...
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9.1 Ranking Rahman: Exploring New Channel Materials ...
Exploring New Channel Materials for Nanoscale CMOS
Type Publications Contributor(s) Anisur Rahman Date 21 May. 2006 Avg. Rating (2) Rate this The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics, and ...
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8.6 Ranking Lundstrom: Notes on the Ballistic MOSFET
Notes on the Ballistic MOSFET
Type Publications Contributor(s) Mark Lundstrom Date 21 Nov. 2005 Avg. Rating (0) Rate this When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. ...
Downloads
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10.0 Ranking Palaria: A MATLAB code for Hartree Fock ...
A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G
Type Downloads Contributor(s) Amritanshu Palaria Date 08 Aug. 2006 Avg. Rating (1) Rate this Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron system that accounts for the antisymmetric (fermion) nature of electronic wavefunction but does not account ...
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8.6 Ranking Datta: MATLAB Scripts for "Quantum ...
MATLAB Scripts for "Quantum Transport: Atom to Transistor"
Type Downloads Contributor(s) Supriyo Datta Date 15 Mar. 2005 Avg. Rating (2) Rate this Tinker with quantum transport models! Download the MATLAB scripts used to demonstrate the physics described in Supriyo Datta's book Quantum Transport: Atom to Transistor. These simple models are less than a page of code, and yet they reproduce much of the fundamental physics observed in experiments.
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8.3 Ranking Koswatta: MOSCNT: code for carbon nanotube ...
MOSCNT: code for carbon nanotube transistor simulation
Type Downloads Contributor(s) Siyu Koswatta, Jing Guo, Dmitri Nikonov Date 15 Nov. 2006 Avg. Rating (2) Rate this Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that ...
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7.4 Ranking Ren: NanoMOS 2.5 Source Code Download
NanoMOS 2.5 Source Code Download
Type Downloads Contributor(s) Zhibin Ren, Sebastien Goasguen Date 22 Feb. 2005 Avg. Rating (2) Rate this NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the ...
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7.0 Ranking FETToy 2.0 Source Code Download
FETToy 2.0 Source Code Download
Type Downloads Contributor(s) Date 27 Oct. 2005 Avg. Rating (1) Rate this FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a ...
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0.0 Ranking Nikonov: recursive algorithm for NEGF in ...
recursive algorithm for NEGF in Matlab
Type Downloads Contributor(s) Dmitri Nikonov Date 13 Nov. 2006 Avg. Rating (0) Rate this This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method. recuresealg3d.m - works for 3-diagonal matrices recuresealgblock3d.m - works for ...
Workshops
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10.0 Ranking 2005 Molecular Conduction and ...
2005 Molecular Conduction and Sensors Workshop
Type Workshops Contributor(s) Date 25 May. 2005 Avg. Rating (0) Rate this This is the 3rd in a series of annual workshops on Molecular Conduction. The prior workshops have been at Purdue University, W. Lafayette, IN (2003) and Nothwestern University, Evanston, IL (2004). The workshop has been an informal and open venue for discussing new results, key challenges, and ...
- 7.6 Ranking SURI 2003 Conference
Popular Questions with this Tag
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How do I derive the 2D electron density used in nano MOSFET calculations?
In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by ...
Asked by George Pau - 3 months 2 weeks ago
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Open Questions with this Tag
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How do I derive the 2D electron density used in nano MOSFET calculations?
In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by ...
Asked by George Pau - 3 months 2 weeks ago - 1 response
Tags:
Related Topic Pages
The following are topic pages tagged with "nanotransistors" that were posted by other users in our topics wiki.