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Tags: nano-transistors

Resources

Tools

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Online Presentations

  • 10.0 Ranking Snider: Nanoelectronic Architectures

    Nanoelectronic Architectures

    Type Online Presentations
    Contributor(s) Greg Snider
    Date 28 Aug. 2006
    Avg. Rating 5.0 out of 5 stars  (1)
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    Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using ...

  • 10.0 Ranking Lundstrom: Moore's Law Forever?

    Moore's Law Forever?

    Type Online Presentations
    Contributor(s) Mark Lundstrom
    Date 10 Aug. 2005
    Avg. Rating 5.0 out of 5 stars  (4)
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    In 1965, Gordon Moore observed that the number of transistors on a silicon chip doubled every technology generation (12 months at that time, currently 18-24 months). He predicted that this trend would continue for a while. Forty years later, Moore's Law continues to hold. Since the number of ...

  • 10.0 Ranking Shalaev: Plasmonic Nanophotonics: Coupling ...

    Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons

    Type Online Presentations
    Contributor(s) Vladimir M. Shalaev
    Date 04 Oct. 2005
    Avg. Rating 5.0 out of 5 stars  (2)
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    The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information technologies, which were formerly entirely electronic, are increasingly enlisting light to communicate and ...

  • 10.0 Ranking Lundstrom: Simple Theory of the Ballistic ...

    Simple Theory of the Ballistic MOSFET

    Type Online Presentations
    Contributor(s) Mark Lundstrom
    Date 19 Oct. 2005
    Avg. Rating 5.0 out of 5 stars  (2)
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    Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but ...

  • 10.0 Ranking Liu: Nano-Scale Device Simulations ...

    Nano-Scale Device Simulations Using PROPHET

    Type Online Presentations
    Contributor(s) Yang Liu, Robert Dutton, Yang Liu
    Date 22 Jan. 2006
    Avg. Rating 5.0 out of 5 stars  (2)
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    These two lectures are aimed to give a practical guide to the use of a general device simulator (PROPHET) available on nanoHUB. PROPHET is a partial differential equation (PDE) solver that offers users the flexibility of integrating new models and equations for their nano-device simulations. ...

  • 10.0 Ranking Sands: Nanotubes and Nanowires: ...

    Nanotubes and Nanowires: One-dimensional Materials

    Type Online Presentations
    Contributor(s) Timothy D. Sands
    Date 17 Jul. 2006
    Avg. Rating 5.0 out of 5 stars  (6)
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    What is a nanowire? What is a nanotube? Why are they interesting and what are their potential applications? How are they made? This presentation is intended to begin to answer these questions while introducing some fundamental concepts such as wave-particle duality, quantum confinement, the ...

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Courses

  • 9.8 Ranking Lundstrom: ECE 612 Nanoscale Transistors

    ECE 612 Nanoscale Transistors

    Type Courses
    Contributor(s) Mark Lundstrom
    Date 08 Aug. 2006
    Avg. Rating 5.0 out of 5 stars  (15)
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    This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

  • 9.4 Ranking Datta: Quantum Transport: Atom to ...

    Quantum Transport: Atom to Transistor

    Type Courses
    Contributor(s) Supriyo Datta
    Date 07 Aug. 2006
    Avg. Rating 5.0 out of 5 stars  (21)
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    The development of "nanotechnology" has made it possible to engineer materials and devices on a length scale as small as several nanometers (atomic distances are ~ 0.1 nm). The properties of such "nanostructures" cannot be described in terms of macroscopic parameters like mobility and diffusion ...

  • 1.1 Ranking   Curriculum on Nanotechnology

    Curriculum on Nanotechnology

    Type Courses
    Contributor(s)
    Date 27 Jan. 2005
    Avg. Rating 5.0 out of 5 stars  (1)
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    The NCN seeks to bring the new understanding emerging from research in nanoscience into the graduate and undergraduate curriculum. We are now at the dawn of what might be a new era in technology, but to exploit the opportunities that nanoscience is giving us, engineers will need to learn how to ...

  • 0.0 Ranking Alam: Reliability Physics of Nanoscale ...

    Reliability Physics of Nanoscale Transistors

    Type Courses
    Contributor(s) Muhammad A. Alam
    Date 27 Nov. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, we learn how to compute current through a device when a voltage is applied. However, as transistors are turned on and off trillions of times during the years of the ...

  • 0.0 Ranking Lundstrom: Carrier Transport at the Nanoscale

    Carrier Transport at the Nanoscale

    Type Courses
    Contributor(s) Mark Lundstrom
    Date 27 Nov. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts, the course consists of four parts. Part 1 focuses on ballistic (and quasi-ballistic) transport both semiclassical and quantum. Part 2 treats ...

Learning Modules

  • 10.0 Ranking Lundstrom: Ballistic Nanotransistors

    Ballistic Nanotransistors

    Type Learning Modules
    Contributor(s) Mark Lundstrom
    Date 07 Dec. 2005
    Avg. Rating 5.0 out of 5 stars  (13)
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    This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. This learning module introduces the ...

  • 5.8 Ranking Vasileska: Modeling Single and Dual-Gate ...

    Modeling Single and Dual-Gate Capacitors using SCHRED

    Type Learning Modules
    Contributor(s) Dragica Vasileska
    Date 31 Mar. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description, ...

  • 5.7 Ranking Fodor: Introduction to Schred

    Introduction to Schred

    Type Learning Modules
    Contributor(s) James K Fodor, Jing Guo
    Date 28 Jun. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...

  • 5.6 Ranking Fodor: Introduction to FETToy

    Introduction to FETToy

    Type Learning Modules
    Contributor(s) James K Fodor, Jing Guo
    Date 03 Jul. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...

  • 5.6 Ranking Fodor: Introduction to nanoMOS

    Introduction to nanoMOS

    Type Learning Modules
    Contributor(s) James K Fodor, Jing Guo
    Date 02 Jul. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...

Teaching Materials

  • 10.0 Ranking Liu: Nano-Scale Device Simulations ...

    Nano-Scale Device Simulations Using PROPHET-Lab Exercise 1

    Type Teaching Materials
    Contributor(s) Yang Liu
    Date 08 Feb. 2006
    Avg. Rating 5.0 out of 5 stars  (1)
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    Companion exercises for "Nano-Scale Device Simulations Using PROPHET".

  • 10.0 Ranking Liu: Nano-Scale Device Simulations ...

    Nano-Scale Device Simulations Using PROPHET-Lab Exercise 2

    Type Teaching Materials
    Contributor(s) Yang Liu
    Date 08 Feb. 2006
    Avg. Rating 5.0 out of 5 stars  (1)
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    Companion exercises for "Nano-Scale Device Simulations Using PROPHET".

  • 8.5 Ranking Klimeck: Semiconductor Device Education ...

    Semiconductor Device Education Material

    Type Teaching Materials
    Contributor(s) Gerhard Klimeck
    Date 28 Jan. 2008
    Avg. Rating 5.0 out of 5 stars  (2)
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    When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, ...

  • 2.6 Ranking Lundstrom: Exercises for FETToy

    Exercises for FETToy

    Type Teaching Materials
    Contributor(s) Mark Lundstrom
    Date 07 Dec. 2005
    Avg. Rating 4.0 out of 5 stars  (1)
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    This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.

Animations

Publications

  • 10.0 Ranking Wang: Device Physics and Simulation of ...

    Device Physics and Simulation of Silicon Nanowire Transistors

    Type Publications
    Contributor(s) Jing Wang
    Date 20 May. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry ...

  • 10.0 Ranking Ren: Nanoscale MOSFETs: Physics, ...

    Nanoscale MOSFETs: Physics, Simulation and Design

    Type Publications
    Contributor(s) Zhibin Ren
    Date 26 Oct. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer ...

  • 10.0 Ranking Guo: Carbon Nanotube Electronics: ...

    Carbon Nanotube Electronics: Modeling, Physics, and Applications

    Type Publications
    Contributor(s) Jing Guo
    Date 30 Oct. 2006
    Avg. Rating 5.0 out of 5 stars  (3)
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    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ ...

  • 10.0 Ranking Venugopal: Modeling Quantum Transport in ...

    Modeling Quantum Transport in Nanoscale Transistors

    Type Publications
    Contributor(s) Ramesh Venugopal
    Date 30 Oct. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new ...

  • 9.1 Ranking Rahman: Exploring New Channel Materials ...

    Exploring New Channel Materials for Nanoscale CMOS

    Type Publications
    Contributor(s) Anisur Rahman
    Date 21 May. 2006
    Avg. Rating 4.5 out of 5 stars  (2)
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    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics, and ...

  • 8.6 Ranking Lundstrom: Notes on the Ballistic MOSFET

    Notes on the Ballistic MOSFET

    Type Publications
    Contributor(s) Mark Lundstrom
    Date 21 Nov. 2005
    Avg. Rating 0.0 out of 5 stars  (0)
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    When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. ...

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Downloads

  • 10.0 Ranking Palaria: A MATLAB code for Hartree Fock ...

    A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G

    Type Downloads
    Contributor(s) Amritanshu Palaria
    Date 08 Aug. 2006
    Avg. Rating 5.0 out of 5 stars  (1)
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    Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron system that accounts for the antisymmetric (fermion) nature of electronic wavefunction but does not account ...

  • 8.6 Ranking Datta: MATLAB Scripts for "Quantum ...

    MATLAB Scripts for "Quantum Transport: Atom to Transistor"

    Type Downloads
    Contributor(s) Supriyo Datta
    Date 15 Mar. 2005
    Avg. Rating 5.0 out of 5 stars  (2)
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    Tinker with quantum transport models! Download the MATLAB scripts used to demonstrate the physics described in Supriyo Datta's book Quantum Transport: Atom to Transistor. These simple models are less than a page of code, and yet they reproduce much of the fundamental physics observed in experiments.

  • 8.3 Ranking Koswatta: MOSCNT: code for carbon nanotube ...

    MOSCNT: code for carbon nanotube transistor simulation

    Type Downloads
    Contributor(s) Siyu Koswatta, Jing Guo, Dmitri Nikonov
    Date 15 Nov. 2006
    Avg. Rating 4.0 out of 5 stars  (2)
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    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that ...

  • 7.4 Ranking Ren: NanoMOS 2.5 Source Code Download

    NanoMOS 2.5 Source Code Download

    Type Downloads
    Contributor(s) Zhibin Ren, Sebastien Goasguen
    Date 22 Feb. 2005
    Avg. Rating 4.5 out of 5 stars  (2)
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    NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the ...

  • 7.0 Ranking   FETToy 2.0 Source Code Download

    FETToy 2.0 Source Code Download

    Type Downloads
    Contributor(s)
    Date 27 Oct. 2005
    Avg. Rating 4.0 out of 5 stars  (1)
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    FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a ...

  • 0.0 Ranking Nikonov: recursive algorithm for NEGF in ...

    recursive algorithm for NEGF in Matlab

    Type Downloads
    Contributor(s) Dmitri Nikonov
    Date 13 Nov. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method. recuresealg3d.m - works for 3-diagonal matrices recuresealgblock3d.m - works for ...

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Workshops

  • 10.0 Ranking   2005 Molecular Conduction and ...

    2005 Molecular Conduction and Sensors Workshop

    Type Workshops
    Contributor(s)
    Date 25 May. 2005
    Avg. Rating 0.0 out of 5 stars  (0)
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    This is the 3rd in a series of annual workshops on Molecular Conduction. The prior workshops have been at Purdue University, W. Lafayette, IN (2003) and Nothwestern University, Evanston, IL (2004). The workshop has been an informal and open venue for discussing new results, key challenges, and ...

  • 7.6 Ranking   SURI 2003 Conference

    SURI 2003 Conference

    Type Workshops
    Contributor(s)
    Date 21 Apr. 2004
    Avg. Rating 0.0 out of 5 stars  (0)
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    2003 SURI Conference Proceedings

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