Description

The tunnel field-effect transistor (tunnel FET or TFET) is a transistor that operate by tunneling through the source/drain barrier rather than diffusion over the barrier. Tunnel FETs belongs to the family of so-called steep-slope devices which can switch on/off at lower voltages than metal oxide semiconductor FETs (MOSFETs) and are being investigated for ultra-low-power electronic applications.

Resources (1-12 of 12)

1. IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

   Online Presentations | 15 Jul 2021 | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin

   In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...

2. IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians

   Online Presentations | 14 Jul 2021 | Contributor(s):: Adel Mfoukh, Marco Pala

   Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...

3. Compact Solver for Double-Gate Tunnel-FETs

   Tools | 29 Mar 2021 | Contributor(s):: Alexander Kloes, Fabian Horst, Anita Farokhnejad

   Plotting of DC and AC characteristics of DG-Tunnel-FETs using equations of the corresponding Verilog-A compact model THM-TFET.

4. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

   Online Presentations | 01 Nov 2016 | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

   IWCE 2015 presentation.

5. Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

   Online Presentations | 22 Sep 2016 | Contributor(s):: Jamie Teherani

   Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

6. A UCSD analytic TFET model

   Downloads | 18 Dec 2015 | Contributor(s):: Jianzhi Wu, Yuan Taur

   A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

7. Inter-band Tunnel Transistors: Opportunities and Challenges

   Online Presentations | 30 Oct 2015 | Contributor(s):: Suman Datta

   In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

8. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

   Online Presentations | 10 Oct 2015 | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

   IWCE 2015 presentation.  Abstract and more information to be added at a later date.

9. Tunnel FET Learning Tutorial

   Presentation Materials | 05 Mar 2014 | Contributor(s):: Mark Cheung

   This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results

10. Tunnel FETs - Device Physics and Realizations

    Online Presentations | 10 Jul 2013 | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

11. Course on Beyond CMOS Computing

    Teaching Materials | 06 Jun 2013 | Contributor(s):: Dmitri Nikonov

    Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

12. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    Online Presentations | 05 Aug 2010 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...