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FETToy
Tools | 14 Feb 2006 | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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From Semi-Classical to Quantum Transport Modeling
Series | 09 Aug 2009 | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
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From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Usuki Method and Theoretical Description of Green's Functions
Teaching Materials | 09 Aug 2009 | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
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Fundamentals of Nanoelectronics (Fall 2004)
Courses | 01 Sep 2004 | Contributor(s):: Supriyo Datta, Behtash Behinaein
Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents. Welcome to the ECE 453 lectures. The development of "nanotechnology" has made it possible to engineer material and devices on a length...
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Green's Functions Method Explained
Teaching Materials | 09 Aug 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a tutorial on non-equilibrium Green's functions.
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Highly Efficient Thermal Transport: The Application of Carbon Nanotube Array Interfaces
Online Presentations | 01 Feb 2007 | Contributor(s):: Baratunde A. Cola
Carbon nanotubes (CNTs) have received much attention in recent years for their extraordinary properties that through careful engineering may be leverage for the development of numerous advantageous applications. However, to date, only few CNT based applications exist in the market place. So when...
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Huckel-IV on the nanoHub
Online Presentations | 09 Jul 2003 | Contributor(s):: Magnus Paulsson, Ferdows Zahid, Supriyo Datta
Huckel-IV on the nanoHub
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Inelastic Scattering in NEGF: Matlab Implementation and Exercises
Downloads | 31 Dec 2010 | Contributor(s):: Samiran Ganguly, Supriyo Datta
A set of Matlab scripts has been developed illustrating the treatment of inelastic scattering in non-equilibrium Greens function (NEGF) based quantum transport models. The first script highlights the core principles using a simple conductor described by a (2x2) Hamiltonian matrix, while the...
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Introduction to FETToy
Series | 03 Jul 2007 | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...
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Introduction to nanoMOS
Series | 02 Jul 2007 | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...
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Introduction to Quantum Transport
Papers | 30 Jan 2022 | Contributor(s):: Supriyo Datta
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...
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Introduction to the Keldysh Nonequilibrium Green Function Technique
Papers | 06 Oct 2006 | Contributor(s):: A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1].The...
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Introduction: Nanoelectronics and the meaning of resistance
Online Presentations | 20 Aug 2008 | Contributor(s):: Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...
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IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians
Online Presentations | 14 Jul 2021 | Contributor(s):: Adel Mfoukh, Marco Pala
Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...
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IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations
Online Presentations | 15 Jul 2021 | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis
The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....
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IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach
Online Presentations | 15 Jul 2021 | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin
In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...
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IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials
Online Presentations | 14 Jul 2021 | Contributor(s):: Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis
In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).
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Joshua Obodo
https://nanohub.org/members/79273
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Kai Kwok
Kai H. Kwok (S’88-M’01-SM’07, IEEE) received the B.A.Sc. degree in Computer Engineering at University of Waterloo, Waterloo, ON, Canada, in 1993. He then received the M.A.Sc....
https://nanohub.org/members/64072
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Krishnakali Chaudhuri
https://nanohub.org/members/70104