Tags: nanowires

Description

A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.

Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.

All Categories (61-80 of 160)

  1. Ferroelectric BaTiO3 Nanowires: Synthesis, Properties, and Device Applications

    Online Presentations | 12 Feb 2008 | Contributor(s):: Zhaoyu Wang

    One dimensional ferroelectric nanowires have attracted much attention due to its interests in fundamental physics and potential applications in Nanoelectromechanical Systems (NEMS), non-volatile ferroelectric memories, and sensors. Domain structure is the most important property of ferroelectric...

  2. Gopikrishna V

    https://nanohub.org/members/299311

  3. Aug 21 2023

    ICANM2023: 10th International Conference & Exhibition on Advanced & Nano Materials

    The ICANM  conference and exhibition  is designed to promote information exchange among scientists, technologists, engineers, entrepreneurs and exhibitors involved in materials...

    https://nanohub.org/events/details/2239

  4. Illinois ECE 598EP Lecture 8 - Hot Chips: Thermal Conductivity of Solids

    Online Presentations | 24 Jun 2009 | Contributor(s):: Eric Pop, Omar N Sobh

    Thermal Conductivity of SolidsTopics: Kinetic Theory of Energy Transport Simple Kinetic Theory Assumptions Phonon MFP and Scattering Time Silicon Film Thermal Conductivity Silicon Nanowire Thermal Conductivity Isotope Scattering Electron Thermal Conductivity Thermal Conductivity of Cu and Al

  5. Illinois ECE598XL Semiconductor Nanotechnology

    Courses | 14 Jun 2011 | Contributor(s):: Xiuling Li

    Lectures and discussion on current topics of semiconductor nanotechnology building block formation, characterization and device applications. Group IV, III-V and II-VI semiconductor nanowires, nanotubes and related nanophotonic and nanoelectronic device science and technology will be examined,...

  6. Introduction of MEMS Activity at Nano/Micro System Engineering Lab., Kyoto University

    Online Presentations | 15 Sep 2007 | Contributor(s):: OSAMU TABATA

    We are aiming at the realization of microsystems and nanosystems with novel and unique functions by integrating functional elements in different domains such as mechanics, electronics, chemistry, optics and biotechnology. These micro/nano systems are expected to be novel machines, which will...

  7. Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs

    Online Presentations | 08 Aug 2006 | Contributor(s):: Monica Taba, Gerhard Klimeck

    Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...

  8. Is Seeing Believing? How to Think Visually and Analyze with Both Your Eyes and Brain

    Online Presentations | 26 Mar 2007 | Contributor(s):: David Ebert

    This presentation will cover the basic techniques, and some of the available tools, for visualization, and will explain how to avoid miscommunicating information from visualizations.

  9. IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

    Online Presentations | 15 Jul 2021 | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin

    In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...

  10. IWCN 2021: Multiscale Modeling and Simulation of Advanced Photovoltaic Devices

    Online Presentations | 14 Jul 2021 | Contributor(s):: Yongjie Zou, Reza Vatan Meidanshahi, Raghuraj Hathwar, Stephen M. Goodnick

    The introduction of new materials, device concepts and nanotechnology-based solutions to achieve high efficiency and low cost in photovoltaic (PV) devices requires modeling and simulation well beyond the current state of the art. New materials and heterojunction interfaces require atomistic...

  11. jesus alexis Gonzalez

    https://nanohub.org/members/161639

  12. Jos Haverkort

    I am a Lecturer in Physics with interest in nanowire solar cells

    https://nanohub.org/members/69120

  13. Josephson Detection of Multiband Effects in Superconductors

    Online Presentations | 07 Sep 2020 | Contributor(s):: James Williams

    In this talk focus be given to the modification of conventional Josephson effects due to the loss of time reversal symmetry found to exist in proximity-induced Josephson junction of SnTe nanowires.

  14. JunSik Yoon

    Bachelor's degree of electrical engineering at POSTECH, 2012.Currently, pursuing to receiveDoctor's degree of creative IT engineering at POSTECH, 2016.My major is "characterization of...

    https://nanohub.org/members/85695

  15. Justin Koepke

    https://nanohub.org/members/27307

  16. Kevin Grossklaus

    I am a graduate research assistant at the University of Michigan- Ann Arbor, working in the Millunchick group. My research exams ion irradiation effects on III-V semiconductor film growth, ion beam...

    https://nanohub.org/members/60848

  17. Kevin T Siegl

    https://nanohub.org/members/45226

  18. KP Nanowire/UTB FET

    Tools | 22 Mar 2009 | Contributor(s):: Mincheol Shin

    Simulate Nanowire/UTB FETs Using KP method

  19. Landauer Approach to Thermoelectrics

    Papers | 21 Jun 2013 | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  20. Lecture 1: Percolation in Electronic Devices

    Online Presentations | 04 Nov 2008 | Contributor(s):: Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...