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ECE 612 Lecture 18A: CMOS Process Steps
Online Presentations | 12 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
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ECE 612 Lecture 8: Scattering Theory of the MOSFET II
Online Presentations | 08 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
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ECE 612 Lecture 7: Scattering Theory of the MOSFET I
Online Presentations | 08 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
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Introductory Comments
Online Presentations | 29 Sep 2008 | Contributor(s):: Muhammad A. Alam
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Lecture 7: Connection to the Bottom Up Approach
Online Presentations | 23 Sep 2008 | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
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Lecture 3A: The Ballistic MOSFET
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
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Lecture 3B: The Ballistic MOSFET
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
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Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
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Lecture 2: Elementary Theory of the Nanoscale MOSFET
Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
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Lecture 4: Scattering in Nanoscale MOSFETs
Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
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Lecture 5: Application to State-of-the-Art FETs
Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
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Introduction: Physics of Nanoscale MOSFETs
Online Presentations | 26 Aug 2008 | Contributor(s):: Mark Lundstrom
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Lecture 1: Review of MOSFET Fundamentals
Online Presentations | 26 Aug 2008 | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
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Electronics From the Bottom Up: top-down/bottom-up views of length
Online Presentations | 17 Aug 2007 | Contributor(s):: Muhammad A. Alam
When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the...
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CMOS-Nano Hybrid Technology: a nanoFPGA-related study
Online Presentations | 04 Apr 2007 | Contributor(s):: Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....
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MSE 376 Lecture 13: Nanoscale CMOS, part 2
Online Presentations | 31 Mar 2007 | Contributor(s):: Mark C. Hersam
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MSE 376 Lecture 12: Nanoscale CMOS, part 1
Online Presentations | 31 Mar 2007 | Contributor(s):: Mark C. Hersam
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Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?
Online Presentations | 20 Apr 2004 | Contributor(s):: Jerry M. Woodall
Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to...
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Nanoelectronics and the Future of Microelectronics
Online Presentations | 22 Aug 2002 | Contributor(s):: Mark Lundstrom
Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in new, molecular-scale devices that might complement a basic silicon platform by providing it...