When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the presentation, “An Introduction to Electronics from the Bottom Up,” shows that these two seemingly unrelated problems are part of a more general problem involving percolative transport at the nanoscale.

For a complete list of resources related to this project please see: Electronics from the Bottom Up.

Intel Corporation
National Science Foundation
Network for Computational Nanotechnology

Researchers should cite this work as follows:

• Muhammad A. Alam (2007), "Electronics From the Bottom Up: top-down/bottom-up views of length," https://nanohub.org/resources/2974.

  BibTex | EndNote

1. devices
2. education
3. education/outreach
4. MOSFET
5. nanoelectronics