Tags: MIT virtual source model (MVS)

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Description

The virtual source (VS) model describes the behavior of nanoscale transistors in the quasi-ballistic regime. The MIT implementation of the VS model is referred to as the “MVS” model and has been extensively used for device characterization and technology benchmarking.

Several versions of this basic model have been implemented and are available on the NEEDS site.

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  1. The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors

    Online Presentations | 04 Oct 2015 | Contributor(s):: Shaloo Rakheja

    In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...

  2. The MVS Nanotransistor Model: A Primer

    Online Presentations | 26 Nov 2014 | Contributor(s):: Mark Lundstrom

    In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...

  3. The MVS Nanotransistor Model: A Case Study in Compact Modeling

    Online Presentations | 26 Nov 2014 | Contributor(s):: Shaloo Rakheja

    In this talk, I will present my view on building an industry-standard compact model by using the MVS model as a case study. In the first part of the talk, I discuss mathematical issues, such as the smoothness of functions and their higher-order derivatives in connection with the MVS model....