MOSCap

By Akira Matsudaira1; Saumitra Raj Mehrotra2; Shaikh S. Ahmed3; Gerhard Klimeck2; Dragica Vasileska4

1. University of Illinois at Urbana-Champaign 2. Purdue University 3. Southern Illinois University Carbondale 4. Arizona State University

Capacitance of a MOS device

Launch Tool

You must login before you can run this tool.

Version 1.8 - published on 23 Jul 2014

doi:10.4231/D3736M30D cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

Recent Questions

Ask a question

Recent Questions (1-10 of 10)
2316 CV-curves of a single-gate MOS capacitor
Asked by rezwan refat @ on • Open • 10 		0 Like
1603 polysilicon doping concentration?
Asked by kim ji min @ on • Open • 0
1598 Reference voltage
Asked by Dimitris Birbiliotis @ on • Open • 0 		0 Like
1306 C-V characteristic and transient analylsis?
Asked by Ahmed Samir Hamed @ on • Open • 0 		0 Like
1067 How to change the semiconductor properties in the input if the default is silicon?
Asked by Krishnakali Chaudhuri @ on • Open • 0 		0 Like
984 Temperature dependence
Asked by Andrew Martin Santos @ on • Open • 1 		0 Like
658 Work Function/Flat Bias Adjustment?
Asked by Marcela Meza @ on • Open • 1 		0 Like
500 what happens in the deep depletion region?
Asked by Samuel Opoku Aboagye @ on • Open • 2 		0 Like
323 deep accumulation for small devices carrier density/availability of customizable PADRE
Asked by Philip David Flammer @ on • Closed • 1 		0 Like
269 sir i need simulation which is based on my mathematical equation. Here we are just varying the variable and this simulator giving us result. can we do any changes any method for solving this ?
Asked by pankaj zope @ on • Closed • 1 		0 Like