Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
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1. Auger Generation as an Intrins…
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2. Collaborators
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3. Outline
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4. Why TFETs?
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5. Brief Introduction to TFETs
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6. Transfer characteristics for a…
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7. Reducing the voltage reduces t…
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8. Decreasing the SS gives improv…
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9. What limits the SS in MOSFETs?
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10. Band diagram for a MOSFET in t…
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11. A thermal distribution of elec…
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12. off current is limited by a th…
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13. Gate bias lowers the barrier f…
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14. SS in a MOSFET is limited to 6…
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15. SS in a MOSFET is limited to 6…
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16. TFET structure is similar to a…
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17. TFET design prevents off curre…
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18. TFETs turn-on by modulating th…
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19. Since TFETs are governed by di…
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20. State-of-the-Field for TFETs
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21. TFET simulations suggest super…
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22. Many TFET simulations are in s…
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23. Traps and defects are certainl…
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24. We'll study an ideal TFET:
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25. Band-to-band tunneling occurs …
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26. We turn the TFET on
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27. BTBT and G&R are fundamentally…
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28. Proposed mechanism
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29. Auger leakage current in exper…
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30. To understand the photodiode r…
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31. In TFET structure
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32. In TFET structure
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33. Several types of Auger generat…
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34. For CHCC
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35. For HCHH
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36. Net Auger transition rate is d…
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37. Counting all possible states
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38. Probability of vacant/occupied…
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39. Perturbation that causes the t…
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40. Conservation of energy
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41. After a lot of math
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42. After a lot of math
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43. Auger current density calculat…
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44. Auger current density calculat…
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45. Auger current density calculat…
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46. Visualization of band-to-band …
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47. Band-to-band tunneling has key…
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48. Intrinsic on/off ratio for TFE…
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49. Some remarks
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50. Auger current
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51. Future Work
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52. Summary
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