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ECE 606 L6.1: Electron Tunneling - Transfer Matrix Method
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.2: Electron Tunneling - Tunneling Through a Single Barrier
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.3: Electron Tunneling - Tunneling Through a Double Barrier Structure
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.4: Electron Tunneling - Tunneling Through N Barriers - Formation of Bandstructure
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.5: Electron Tunneling - Analytical and Numerical Solution Strategies
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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Piece-Wise Constant Potential Barrier Sim2L
01 Feb 2023 | | Contributor(s):: Daniel Mejia
Piece-Wise Constant Potential Barrier simulation using sim2l infrastructure
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Modeling Sanning Probe Microscopes (SPM)
06 Jan 2020 | | Contributor(s):: Woodward Maxwell, NNCI Nano
The Modeling Scanning Probe Microscopes (SPM) lab is designed to show students the principles of how a Scanning Probe Microscope works and how mapping on a smaller scale provides a more detailed view of a surface. Students will use a conductivity apparatus to model the mapping behavior of an...
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ANTSY—Assembly for Nanotechnology Survey Courses
Welcome to ANTSY – Assembly for Nano Technology SurveY courses!
This ANTSY support wiki page gathers educational materials that are related to the ANTSY tool. ANTSY assembles several...
https://nanohub.org/wiki/antsy2
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Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019 | | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Modeling of Inter-ribbon Tunneling in Graphene
11 Nov 2016 | | Contributor(s):: Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti
IWCE presentation. In this paper we investigate the finite-size effect in nano-scaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].
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NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org
10 Nov 2016 | | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
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Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
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NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
19 Sep 2016 | | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
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E304 L6.2.2: Nanoelectrics - Tunneling
04 May 2016 | | Contributor(s):: ASSIST ERC
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Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
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A Signed Particle Formulation of Non-Relativistic Quantum Mechanics
03 Jun 2015 | | Contributor(s):: Jean Michel D Sellier
A formulation of non-relativistic quantum mechanics in terms of Newtonian particles is presented in the shape of a set of three postulates. In this new theory, quantum systems are described by ensembles of signed particles which behave as field-less classical objects which carry a...
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Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...
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Uniform Methodology of Benchmarking Beyond-CMOS Devices
31 Oct 2012 | | Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...