The MVS Nanotransistor Model: A Primer
The MVS Nanotransistor Model: A Primer
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1. A Primer on the Virtual Source…
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2. the MIT VS Model
112.67934601267935
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3. outline
150.35035035035037
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4. MOSFET IV characteristic
192.55922589255923
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5. MOSFET IV: low VDS
236.40306973640307
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6. High VDS : velocity saturation
331.63163163163165
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7. MOSFET IV: velocity saturation
389.85652318985655
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8. MOSFET: IV (re-cap)
426.99366032699368
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9. piecewise model for ID(VGS, VD…
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10. From low VDS to high VDS
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11. saturating function: FSAT (VD)
638.20487153820488
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12. level 0 model
651.65165165165172
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13. output resistance
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14. level 0' model
838.13813813813817
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15. outline
870.83750417083752
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16. below threshold
878.57857857857857
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17. subthreshold (surface potentia…
931.031031031031
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18. subthreshold (gate voltage)
1077.8445111778447
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19. charge vs. gate voltage
1223.2565899232566
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20. subthreshold characteristics
1254.4878211544879
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21. subthreshold (summary)
1268.4684684684685
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22. empirical treatment
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23. empirical treatment
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24. Level 1 model
1416.1494828161494
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25. Appendix 2: MVS empirical char…
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26. intrinsic vs. extrinsic voltag…
1567.4341007674341
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27. Level 1' model
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28. outline
1647.9145812479146
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29. MOSFETs
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30. mobility
1765.4988321654989
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31. mobility
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32. velocity saturation in bulk se…
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33. "velocity overshoot"
1952.0186853520188
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34. The MVS model
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35. apparent mobility
2199.8331664998332
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36. ballistic limit (low VDS)
2375.1084417751085
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37. injection velocity
2414.7147147147148
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38. ballistic limit (high VDS)
2588.3216549883218
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39. The VS nanotransistor model
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40. The MVS model
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41. conclusions
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