In this modular course, we will cover recent advances in Negative Bias Temperature Instability (NBTI), which is a crucial reliability issue for Silicon Oxynitride and High K Metal Gate PMOS devices. We will cover different aspects of NBTI in a total of 9 different presentations. We will talk about the physical mechanism of NBTI, which can explain wide variety of experimental signatures and the gate insulator process dependence of NBTI. It is important to remark that the physical mechanism of NBTI has remained a topic of intense debate. Therefore, we will compare different modeling approaches of NBTI that have been published in the literature, and choose the one that is most suitable for predicting experimental data. We will talk about the development of a NBTI simulator. The simulator can predict measured NBTI data under wide range of experimental conditions, and can be used for the projection of short-time measured data under accelerated stress condition to the end-of-life at use condition. We will discuss the continuum as well as the stochastic version of the simulator. Finally we will also talk about the development of a commercial TCAD framework to simulate NBTI.