Tags: Resistive Random-Access Memory (ReRAM)

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  1. Tigran David Grigoryan

    https://nanohub.org/members/315956

  2. 39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed

    Online Presentations | 21 Sep 2020 | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly

    This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...