Tags: NEGF

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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

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  1. Can numerical “experiments” INSPIRE physical experiments?

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    Online Presentations | 20 Dec 2007 | Contributor(s):: Supriyo Datta

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

  2. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    5.0 out of 5 stars 

    Papers | 30 Oct 2006 | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ...

  3. Carbon Nanotube Electronics: Modeling, Physics, and Applications

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    Papers | 27 Jun 2013 | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  4. CNTFET Lab

    3.0 out of 5 stars 

    Tools | 13 Mar 2006 | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom

    Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

  5. Colloquium on Graphene Physics and Devices

    5.0 out of 5 stars 

    Courses | 29 Jul 2009 | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

  6. Compact NEGF-Based Solver for Double-Gate MOSFETs

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    Tools | 12 Nov 2020 | Contributor(s):: Fabian Hosenfeld, Alexander Kloes

    Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.

  7. Course on Beyond CMOS Computing

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    Teaching Materials | 06 Jun 2013 | Contributor(s):: Dmitri Nikonov

    Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

  8. CQT Introduction

    5.0 out of 5 stars 

    Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta

    A short overview of this series of four lectures is given.

  9. CQT Lecture 1: Nanodevices and Maxwell's Demon

    5.0 out of 5 stars 

    Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta

    Objective: To illustrate the subtle interplay of dynamics and thermodynamicsthat distinguishes transport physics.

  10. CQT Lecture 2: Electrical Resistance - A Simple Model

    5.0 out of 5 stars 

    Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta

    Objective:To introduce a simple quantitative model for describing current flow in nanoscalestructures and relate it to well-known large scale properties like Ohm’s Law.

  11. CQT Lecture 3: Probabilities, Wavefunctions and Green Functions

    5.0 out of 5 stars 

    Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta

    Objective: To extend the simple model from Lecture 2 into the full-blown model combines the NEGF (Non-Equilibrium Green Function) method with the Landauer approach.

  12. CQT Lecture 4: Coulomb blockade and Fock space

    5.0 out of 5 stars 

    Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta

    Objective: To illustrate the limitations of the model described in Lectures 2, 3 and introduce a completely different approach based on the concept of Fock space. I believe this will be a key concept in the next stage of development of transport physics.

  13. CQT: Concepts of Quantum Transport

    5.0 out of 5 stars 

    Courses | 30 Nov 2006 | Contributor(s):: Supriyo Datta

    Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations on Nanoelectronics and the Meaning of Resistance. How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that...

  14. Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs

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    Online Presentations | 07 Oct 2015 | Contributor(s):: Stanislav Markov

    IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code [3][4]. In the context of ultra-thin...

  15. Device Physics and Simulation of Silicon Nanowire Transistors

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    Papers | 20 May 2006 | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  16. Device Physics and Simulation of Silicon Nanowire Transistors

    0.0 out of 5 stars 

    Papers | 28 Sep 2006 | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  17. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    0.0 out of 5 stars 

    Papers | 25 Jun 2013 | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  18. Diego José Carrascal

    https://nanohub.org/members/33052

  19. Dissipative Quantum Transport in Semiconductor Nanostructures

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    Papers | 23 Dec 2011 | Contributor(s):: Peter Greck

    In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

  20. DrMohan L Verma

    I want to learn ner tools for material characterization. Specially theoretical tools related to computational nanoscience. Solid state battery and other electrochemical device based materials are...

    https://nanohub.org/members/95448