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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
Online Presentations | 21 Sep 2020 | Contributor(s):: Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly
This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...
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A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
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05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
Online Presentations | 18 Sep 2020 | Contributor(s):: Shimeng Yu, Panni Wang
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
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12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications
Online Presentations | 18 Sep 2020 | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl
In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].
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Bandgap Manipulation of Armchair Graphene nanoribbon
Papers | 01 Sep 2020 | Contributor(s):: Lance Fernandes
Bandgap Manipulation is very important for various applications. Optical Devices need smaller Bandgap where as Diode's need larger Bandgap. Armchair graphene Nanoribbon (AGNR) has a special property where if the numbers of atoms are multiple of three or multiple of three plus one, they are...
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Nanocluster Irradiation Evolution Predictor
Tools | 20 May 2017 | Contributor(s):: Didier Ishimwe, Matthew John Swenson, Janelle P Wharry
Predict size evolution of solute nanoclusters in metallic alloys under irradiation.
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Matthew Weldon
https://nanohub.org/members/296026
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Gaussian Process Regression Model for Piezoelectric and Dielectric Constants in Gallium Nitride
Tools | 26 Sep 2019 | Contributor(s):: Saswat Mishra, Karthik Guda Vishnu, Alejandro Strachan
Gaussian Process Regression Model for Piezoelectric and Dielectric Constants in Gallium Nitride as a function of Strain and Aluminum doping
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Alexis V Miranda
Masters student
https://nanohub.org/members/295321
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Carbon nanotubes and graphene nanoribbons
Wiki
This page provides links to various nanoHUB resources related to carbon nanotubes (CNT) and graphene nanoribbons (GNR).
The CNTbands tool simulates CNT and GNR.
This tutorial introduces various...
https://nanohub.org/wiki/cntgnr
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Kirill Evgenevich Zhirnov
https://nanohub.org/members/293154
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HIMADRI PANDEY, Ph.D.
https://scholar.google.com/citations?user=dnFxtFAAAAAJ&hl=en
https://nanohub.org/members/292409
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Celdas Solares con Tintes Fotosensibles (Dye-Sensetized Solar Cells)
Teaching Materials | 16 Jun 2020 | Contributor(s):: Nano-Link Center for Nanotechnology Education, Frank Fernandes, Rodfal Alberto Rodriguez (editor), María Teresa Rivera (editor)
Este módulo trabaja con la fabricación de una celda solar con tinte fotosensible (“DSC”, por sus siglas en inglés). Una “DSC” es, esencialmente, una celda foto-electroquímica; significa que una reacción química foto-inducida...
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Ian Mitchell
I'm a physics undergrad with an interest in a wide array of subjects—particularly in many-body physics and nonlinear phenomena—and an unfortunate amount of free time.
https://nanohub.org/members/290795
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MALIKA ALAMI MARKTANI
https://nanohub.org/members/289534
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All-optical Magnetization Switching Mediated by Laser-induced Spin Current
Online Presentations | 21 May 2020 | Contributor(s):: Satoshi Iihama
The manipulation of magnetization solely by the ultrashort laser pulse has attracted attention for future ultrafast and low-energy spintronics device [1-4]. GdFeCo has been predominant materials system showing all-optical single-shot magnetization switching. The magnetization switching of GdFeCo...
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Myeon Williams
Mye'on Williams is a Electrical Engineering major at Tuskegee University. His interest is in microelectronics and nanoelectronics. This summer he is working on Agrophotovoltaic project.
https://nanohub.org/members/288465
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Mechanical Exfoliation as a Route to Nanomanufacturing of 2D van der Waals Bonded
Online Presentations | 11 May 2020 | Contributor(s):: Daryl Chrzan
In this talk I present a mechanical exfoliation method able to reliably produce large patterned monolayer samples and place them with upon a substrate in desired locations. The method relies on the epitaxial strain imposed upon the layer to be exfoliated by the deposition of a thin metallic film.
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2D Valley-Spin Transport in Transition Metal Dichalcogenides
Online Presentations | 07 May 2020 | Contributor(s):: Zhihong Chen
In this talk, we first report that valley current can be electrically induced and detected through the valley Hall effect and inverse valley Hall effect, respectively, in monolayer molybdenum disulfide. We compare temperature and channel length dependence of non-local electrical signals in...