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  1. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

    Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

    The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

  2. Is it feasible to model a 2D-channel FET (i.e., TMD or BP) as a HEMT?

    Q&A|Closed | Responses: 0

    I'm working on compact models for 2D-channel FETs and I noticed there is a lot of similarities between them and HEMTs. There is something similar to a 2DEG in the 2D-channel FET and the...

    https://nanohub.org/answers/question/2320

  3. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    https://nanohub.org/publications/71/?v=1

  4. Thermoelectric Device Compact Model

    01 Sep 2015 | Compact Models | Contributor(s):

    By Xufeng Wang1, Kyle Conrad2, Jesse Maassen3, Mark Lundstrom1

    1. Purdue University 2. Texas Instruments 3. Dalhousie University

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

    https://nanohub.org/publications/80/?v=1

  5. RF Solid-State Vibrating Transistors

    Online Presentations | 15 Feb 2014 | Contributor(s):: Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  6. Abdelaali Fargi

    Abdelaali Fargi received his PhD in Physics of Semiconductor Devices and Electronics from Faculty of Sciences of Monastir (Tunisia) in 2016, the Master of Science Degree in Materials Science and...

    https://nanohub.org/members/56303

  7. what is the use of multi channel layers in HEMT?

    Q&A|Open | Responses: 1

    The new HEMT’s like InAlAs/InGaAs/Inp are having number of channels(let’s say 3) with different...

    https://nanohub.org/answers/question/657