Tags: GaN

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  1. Shigeki Yoshida

    https://nanohub.org/members/318796

  2. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

    Online Presentations | 14 Oct 2020 | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

    We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

  3. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

    Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

    The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

  4. 12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications

    Online Presentations | 18 Sep 2020 | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl

    In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].

  5. Mayank Bulsara

    https://nanohub.org/members/291926

  6. MEMS Resonators as an Enabling Technology

    Online Presentations | 07 Aug 2019 | Contributor(s):: Dana Weinstein

  7. Oct 26 2018

    Developing products using GaN on Si Technology – Challenges and Opportunities

    Presented by: Dr. Amitava DasThe advantages of GaN technology for RF and Power Electronics are well documented. This talk will address the next phase of the evolution – technical and economic...

    https://nanohub.org/events/details/1755

  8. yusuf öztürk

    https://nanohub.org/members/133028

  9. Has anybody use Padre to simulate GaN devices?

    Q&A|Closed | Responses: 0

    I need GaN parameters in Padre. Could someone share the code of material definition? Thank you very much.

    https://nanohub.org/answers/question/1269

  10. Has anybody use Padre to simulate GaN devices?

    Q&A|Closed | Responses: 0

    I need GaN parameters in Padre. Could someone share the code of material definition? Thank you very much.

    https://nanohub.org/answers/question/1268

  11. Has anybody use Padre to simulate GaN devices?

    Q&A|Closed | Responses: 0

    I need GaN parameters in Padre. Could someone share the code of material definition? Thank you very much.

    https://nanohub.org/answers/question/1267

  12. Engineering Disorder in Opto-Electronics

    Online Presentations | 05 Dec 2012 | Contributor(s):: Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

  13. Giorgi Tchutchulashvili

    Born in Magnitogorsk, former USSR in 1983.School in Dedoplistskaro, Georgian republic.In 2000 enrolled to Tbilsi State University, Faculty of Physics.Masters degree in 2006, Tbilisi State...

    https://nanohub.org/members/68515

  14. How extensively have nanoparticles been tested in the field of solar cells?

    Q&A|Closed | Responses: 2

    I have seen research that has included silver nanoparticles placed in the wafers of Si. I’ve also seen GaN...

    https://nanohub.org/answers/question/685

  15. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    Online Presentations | 22 Sep 2010 | Contributor(s):: Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

  16. Research Within Vasileska Group

    Presentation Materials | 29 Jun 2010 | Contributor(s):: Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.

  17. Shahed Reza

    https://nanohub.org/members/12894