All Categories (1-4 of 4)

1. What's the mobility?

   Downloads | 08 Sep 2021 | Contributor(s):: Eric Pop

   This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...

2. Rode's Method: Theory and Implementation

   Teaching Materials | 06 Jul 2010 | Contributor(s):: Dragica Vasileska

   This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility calculation for GaAs material at different temperatures and different doping concentrations. Note that the...

3. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

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   Online Presentations | 23 Dec 2008 | Contributor(s):: Ahmad Ehteshamul Islam, Muhammad A. Alam

   Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its...

4. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

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   Online Presentations | 30 Jun 2008 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

   Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...