This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
Padre
2D/3D devices under steady state, transient conditions or AC small-signal analysis
Launch Tool
Archive Version 1.2
Published on 06 May 2008, unpublished on 27 Oct 2009
Latest version: 1.5. All versions
doi:10.4231/D3RB6W20B cite this
This tool is closed source.
Category
Published on
Abstract
PADRE is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry--including heterostructures--with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as Prophet.
For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:
- electrostatic (Poisson equation)
- drift-diffusion (including carrier continuity equations)
- energy balance (including carrier temperature)
- electrothermal (including lattice heating)
- User Guide (HTML)
- Abbreviated First Time User Guide
- FAQ
- A set of course notes on Computational Electronics with detailed explanations on bandstructure, pseudopotentials, numerical issues, and drift diffusion.
- Introduction to DD Modeling with PADRE
- MOS Capacitors: Description and Semiclassical Simulation With PADRE
- A Primer on Semiconductor Device Simulation
Credits
PADRE was developed at Bell Labs by Mark Pinto, R. Kent Smith, and Ashraful Alam.
Additional developments were made in collaboration by the following:
Steven Clark | rappture interface |
Xufeng Wang | rappture interface |
Gerhard Klimeck | interface and output requirements |
Dragica Vasileska | sample inputs and output requirements |
Cite this work
Researchers should cite this work as follows: