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NCN Nanoelectronics: Simulation Tools for Education

This resource has a 6.0 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

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Last 12 Months: updated 01 Oct, 2008
Users: 506
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Citations: 0

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Contributor(s)
Abstract Many simulation tools are available on the nanoHUB. The tools have been well-tested and here include supporting materials so that they can be effectively used for education or intelligently used for research. The educational tools include example a first time users guide and example homework assignments.

For an in depth presentation of educational tools see: Semiconductor Device Education Material.

For a list of recommended research tools see: Simulation Tools for Research.
Sponsored by NCN@Purdue
Cite this work

If you reference this work in a publication, please cite as follows:

  • (2007), "NCN Nanoelectronics: Simulation Tools for Education," http://www.nanohub.org/topics/ncn_nanoelectronics_education_tools.

    BibTex | EndNote

Date posted 28 Nov, 2007
Type Series
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  1. PN Junction Lab

    This resource has a 10.0 Ranking

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    Overall Period: Updated 06 Oct, 2008
    Users: 2016
    Jobs: 17775
    Avg. exec. time: 13 secs
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    Google/IEEE: updated 19 Feb, 2008
    Avg. Review: 0.0 out of 5 stars
    Citations: 1

    2016 users, detailed statistics

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    1 citation

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    12 Sep. 2005 | Tools | Contributor(s): Matteo Mannino, Dragica Vasileska, Michael McLennan, Xufeng Wang, Gerhard Klimeck

    Everything you need to explore and teach the basic concepts of P-N junction devices

  2. Band Structure Lab

    This resource has a 10.0 Ranking

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    Overall Period: Updated 06 Oct, 2008
    Users: 1887
    Jobs: 13345
    Avg. exec. time: 8 mins
    Reviews & Citations
    Google/IEEE: updated 15 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 7

    1887 users, detailed statistics

    3 reviews (Review this)

    7 citations

    2 questions (Ask a question)

    19 May. 2006 | Tools | Contributor(s): Abhijeet Paul, Mathieu Luisier, Neophytos Neophytou, Raseong Kim, Michael McLennan, Mark Lundstrom, Gerhard Klimeck

    Computes the electronic structure of various materials in the spatial configuration of bulk (infinitely periodic), quantum wells (confined in one dimension, infinitely periodic in 2 dimensions), and wires (confined in 2 dimensions and infinitely periodic i

  3. nanoFET Lab

    This resource has a 10.0 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 493
    Jobs: 18594
    Avg. exec. time: 58 mins
    Reviews & Citations
    Google/IEEE: updated 22 Apr, 2008
    Avg. Review: 0.0 out of 5 stars
    Citations: 3

    493 users, detailed statistics

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    3 citations

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    09 Feb. 2007 | Tools | Contributor(s): M. P. Anantram, Shaikh S. Ahmed, Alexei Svizhenko, Derrick Kearney, Gerhard Klimeck

    Simulates quantum ballistic transport properties in two-dimensional MOSFET devices

  4. Quantum Dot Lab

    This resource has a 9.8 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 1577
    Jobs: 13479
    Avg. exec. time: 10 secs
    Reviews & Citations
    Google/IEEE: updated 10 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 12

    1577 users, detailed statistics

    11 reviews (Review this)

    12 citations

    4 questions (Ask a question)

    12 Nov. 2005 | Tools | Contributor(s): Gerhard Klimeck, Matteo Mannino, Michael McLennan, Wei Qiao, David Ebert, Xufeng Wang

    Compute the eigenstates of a particle in a box of various shapes including domes and pyramids.

  5. Padre

    This resource has a 9.8 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 565
    Jobs: 18822
    Avg. exec. time: 6 mins
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    565 users, detailed statistics

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    13 questions (Ask a question)

    12 Jan. 2006 | Tools | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    PADRE simulates the electrical behavior of 2D/3D devices under steady state, transient conditions or AC small-signal analysis.

  6. FETToy

    This resource has a 9.8 Ranking

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    Overall Period: Updated 06 Oct, 2008
    Users: 1592
    Jobs: 26942
    Avg. exec. time: 5 secs
    Reviews & Citations
    Google/IEEE: updated 28 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 20

    1592 users, detailed statistics

    7 reviews (Review this)

    20 citations

    3 questions (Ask a question)

    14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs

  7. BJT Lab

    This resource has a 9.1 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 134
    Jobs: 689
    Avg. exec. time: 5 mins
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    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    134 users, detailed statistics

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    2 questions (Ask a question)

    20 Mar. 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska

    Simulate bipolar junction transistors

  8. CNTbands 2.0

    This resource has a 9.0 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 1911
    Jobs: 18402
    Avg. exec. time: 28 secs
    Reviews & Citations
    Google/IEEE: updated 28 Apr, 2008
    Avg. Review: 4.5 out of 5 stars
    Citations: 10

    1911 users, detailed statistics

    3 reviews (Review this)

    10 citations

    1 question (Ask a question)

    14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom

    CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …

  9. Carrier Statistics Lab

    This resource has a 8.3 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 169
    Jobs: 1209
    Avg. exec. time: 17 secs
    Reviews & Citations
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    Avg. Review: 0.0 out of 5 stars
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    169 users, detailed statistics

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    22 Jan. 2008 | Tools | Contributor(s): Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

    Models Fermi and Maxwell-Boltzmann statistics for Silicon, Germanium, and GaAs

  10. Periodic Potential Lab

    This resource has a 8.2 Ranking

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    Overall Period: Updated 06 Oct, 2008
    Users: 201
    Jobs: 2807
    Avg. exec. time: 13 secs
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    201 users, detailed statistics

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    28 Jan. 2008 | Tools | Contributor(s): Abhijeet Paul, Gerhard Klimeck

    The Periodic Potential Lab solves the time independent Schroedinger Equation in a 1-D spatial potential variation. Rectangular, triangular, parabolic (harmonic), and Coulomb potential confinements can be considered. The user can determine energetic and spatial details of the potential profiles, …

  11. StrainBands

    This resource has a 8.2 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 200
    Jobs: 782
    Avg. exec. time: 4 mins
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    200 users, detailed statistics

    1 review (Review this)

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    15 Jun. 2007 | Tools | Contributor(s): Joe Ringgenberg, Joydeep Bhattacharjee, Jeffrey B. Neaton, Jeffrey C Grossman, Eric Schwegler

    Explore the influence of strain on first-principles bandstructures of semiconductors.

  12. MOSFET

    This resource has a 7.6 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 1705
    Jobs: 18785
    Avg. exec. time: 5 mins
    Reviews & Citations
    Google/IEEE: updated 22 Apr, 2008
    Avg. Review: 4.0 out of 5 stars
    Citations: 2

    1705 users, detailed statistics

    5 reviews (Review this)

    2 citations

    1 question (Ask a question)

    30 Mar. 2006 | Tools | Contributor(s): Matteo Mannino, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal

    Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

  13. Crystal Viewer

    This resource has a 7.3 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 385
    Jobs: 2246
    Avg. exec. time: 2 secs
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    Google/IEEE
    Avg. Review: 3.0 out of 5 stars
    Citations: 0

    385 users, detailed statistics

    1 review (Review this)

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    11 Jan. 2008 | Tools | Contributor(s): Abhijeet Paul, Gerhard Klimeck

    Visualize different Bravais lattices, and crystal planes, and materials (diamond, Si, InAs, GaAs, graphene, buckyball)

  14. MOSCap

    This resource has a 7.3 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 792
    Jobs: 8199
    Avg. exec. time: 5 secs
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    Google/IEEE
    Avg. Review: 2.0 out of 5 stars
    Citations: 0

    792 users, detailed statistics

    1 review (Review this)

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    06 Apr. 2006 | Tools | Contributor(s): Akira Matsudaira, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

    capacitance of a MOS device

  15. MolCToy

    This resource has a 6.6 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 896
    Jobs: 9771
    Avg. exec. time: 3 secs
    Reviews & Citations
    Google/IEEE: updated 24 Mar, 2008
    Avg. Review: 3.0 out of 5 stars
    Citations: 5

    896 users, detailed statistics

    4 reviews (Review this)

    5 citations

    0 questions (Ask a question)

    08 Jun. 2005 | Tools | Contributor(s): Magnus Paulsson, Ferdows Zahid, Supriyo Datta, Michael McLennan

    A collection of simple theoretical models of the conduction through individual molecules between two contacts.

  16. Drift-Diffusion Lab

    This resource has a 4.4 Ranking

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    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 171
    Jobs: 1010
    Avg. exec. time: 39 secs
    Reviews & Citations
    Google/IEEE
    Avg. Review: 2.5 out of 5 stars
    Citations: 0

    171 users, detailed statistics

    3 reviews (Review this)

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    04 Feb. 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck

    Simulate single semiconductor characteristics

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