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NCN Nanoelectronics: Simulation Tools for Research

This resource has a 5.3 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Last 12 Months: updated 01 Oct, 2008
Users: 154
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

154 users

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Contributor(s)
Abstract Many simulation tools are available on the nanoHUB. The tools have been well-tested and here include supporting materials so that they can be effectively used for education or intelligently used for research. The research tools include a first time users guide and supporting publications and theses.

Click here for a list of recommended simulation tools for education.
Cite this work

If you reference this work in a publication, please cite as follows:

  • (2007), "NCN Nanoelectronics: Simulation Tools for Research," http://www.nanohub.org/topics/ncn_nanoelectronics_research_tools.

    BibTex | EndNote

Date posted 28 Nov, 2007
Type Series
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In This Series

  1. Band Structure Lab

    This resource has a 10.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 1887
    Jobs: 13373
    Avg. exec. time: 8 mins
    Reviews & Citations
    Google/IEEE: updated 15 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 7

    1887 users, detailed statistics

    3 reviews (Review this)

    7 citations

    2 questions (Ask a question)

    19 May. 2006 | Tools | Contributor(s): Abhijeet Paul, Mathieu Luisier, Neophytos Neophytou, Raseong Kim, Michael McLennan, Mark Lundstrom, Gerhard Klimeck

    Computes the electronic structure of various materials in the spatial configuration of bulk (infinitely periodic), quantum wells (confined in one dimension, infinitely periodic in 2 dimensions), and wires (confined in 2 dimensions and infinitely periodic i

  2. Schred

    This resource has a 9.7 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 1336
    Jobs: 31948
    Avg. exec. time: 52 secs
    Reviews & Citations
    Google/IEEE: updated 13 Jun, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 80

    1336 users, detailed statistics

    4 reviews (Review this)

    80 citations

    1 question (Ask a question)

    09 Feb. 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck, Mark Lundstrom

    Calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure

  3. CNTbands 2.0

    This resource has a 9.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 1912
    Jobs: 18408
    Avg. exec. time: 28 secs
    Reviews & Citations
    Google/IEEE: updated 28 Apr, 2008
    Avg. Review: 4.5 out of 5 stars
    Citations: 10

    1912 users, detailed statistics

    3 reviews (Review this)

    10 citations

    1 question (Ask a question)

    14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom

    CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …

  4. PETE: Purdue Exploratory Technology Evaluator

    This resource has a 8.5 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 115
    Jobs: 3652
    Avg. exec. time: 3 mins
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    115 users, detailed statistics

    1 review (Review this)

    0 citations

    0 questions (Ask a question)

    27 Jun. 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minim

  5. NanoMOS

    This resource has a 7.9 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 1123
    Jobs: 10985
    Avg. exec. time: 16 mins
    Reviews & Citations
    Google/IEEE: updated 03 Jun, 2008
    Avg. Review: 9.9 out of 5 stars
    Citations: 51

    1123 users, detailed statistics

    1 review (Review this)

    51 citations

    3 questions (Ask a question)

    19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom

    2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

  6. Device Reliability Tool

    This resource has a 6.3 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 193
    Jobs: 775
    Avg. exec. time: 57 secs
    Reviews & Citations
    Google/IEEE: updated 05 Feb, 2008
    Avg. Review: 4.0 out of 5 stars
    Citations: 1

    193 users, detailed statistics

    1 review (Review this)

    1 citation

    1 question (Ask a question)

    28 Aug. 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes MOS device reliability based on Negative Bias Temperature Instability (NBTI).

  7. NanoNET

    This resource has a 5.6 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 07 Oct, 2008
    Users: 338
    Jobs: 1817
    Avg. exec. time: 14 mins
    Reviews & Citations
    Google/IEEE: updated 22 Apr, 2008
    Avg. Review: 2.0 out of 5 stars
    Citations: 3

    338 users, detailed statistics

    1 review (Review this)

    3 citations

    0 questions (Ask a question)

    17 Jan. 2007 | Tools | Contributor(s): Ninad Pimparkar, Satish Kumar, Jayathi Murthy, Muhammad A. Alam

    NanoNET is a tool to simulate the Nanobundle Network Thin Film Transistors (NB-TFTs). Random networks of carbon nanotubes with thousands of tubes and random orientation can be simulated using this tool. The final answer can be compactly formulated in the formula shown in the picture. Here ID is …

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