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NCN Nanoelectronics: Simulation Tools for Research

This resource has a 5.1 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Last 12 Months: updated 01 Jul, 2008
Users: 0
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

0 reviews (Review this)

0 citations

Contributor(s)
Abstract Many simulation tools are available on the nanoHUB. The tools have been well-tested and here include supporting materials so that they can be effectively used for education or intelligently used for research. The research tools include a first time users guide and supporting publications and theses.

Click here for a list of recommended simulation tools for education.
Cite this work

If you reference this work in a publication, please cite as follows:

  • (2007), "NCN Nanoelectronics: Simulation Tools for Research," http://www.nanohub.org/topics/ncn_nanoelectronics_research_tools.

    BibTex | EndNote

Date posted 28 Nov, 2007
Type Series
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In This Series

  1. Bandstructure Lab

    This resource has a 10.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 1771
    Jobs: 12091
    Avg. exec. time: 8 mins
    Reviews & Citations
    Google/IEEE: updated 15 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 7

    1771 users, detailed statistics

    3 reviews (Review this)

    7 citations

    0 questions (Ask a question)

    19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom

    Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.

  2. Schred

    This resource has a 9.7 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 1294
    Jobs: 31005
    Avg. exec. time: 52 secs
    Reviews & Citations
    Google/IEEE: updated 13 Jun, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 80

    1294 users, detailed statistics

    4 reviews (Review this)

    80 citations

    0 questions (Ask a question)

    09 Feb. 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck, Mark Lundstrom

    Calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure

  3. CNTbands 2.0

    This resource has a 9.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 1875
    Jobs: 17809
    Avg. exec. time: 27 secs
    Reviews & Citations
    Google/IEEE: updated 28 Apr, 2008
    Avg. Review: 4.5 out of 5 stars
    Citations: 10

    1875 users, detailed statistics

    3 reviews (Review this)

    10 citations

    1 question (Ask a question)

    14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, Diego Kienle, James K Fodor, Gengchiau Liang, Akira Matsudaira, Gerhard Klimeck, Jing Guo

    CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …

  4. PETE: Purdue Exploratory Technology Evaluator

    This resource has a 8.6 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 108
    Jobs: 3306
    Avg. exec. time: 3 mins
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    108 users, detailed statistics

    1 review (Review this)

    0 citations

    0 questions (Ask a question)

    27 Jun. 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minim

  5. nanoMOS

    This resource has a 7.2 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 1074
    Jobs: 10272
    Avg. exec. time: 16 mins
    Reviews & Citations
    Google/IEEE: updated 03 Jun, 2008
    Avg. Review: 9.9 out of 5 stars
    Citations: 51

    1074 users, detailed statistics

    1 review (Review this)

    51 citations

    1 question (Ask a question)

    19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom

    2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

  6. Device Reliability Tool

    This resource has a 6.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 181
    Jobs: 746
    Avg. exec. time: 58 secs
    Reviews & Citations
    Google/IEEE: updated 05 Feb, 2008
    Avg. Review: 4.0 out of 5 stars
    Citations: 1

    181 users, detailed statistics

    1 review (Review this)

    1 citation

    0 questions (Ask a question)

    28 Aug. 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes MOS device reliability based on Negative Bias Temperature Instability (NBTI).

  7. NanoNET

    This resource has a 5.2 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 316
    Jobs: 1599
    Avg. exec. time: 12 mins
    Reviews & Citations
    Google/IEEE: updated 22 Apr, 2008
    Avg. Review: 2.0 out of 5 stars
    Citations: 3

    316 users, detailed statistics

    1 review (Review this)

    3 citations

    0 questions (Ask a question)

    17 Jan. 2007 | Tools | Contributor(s): Ninad Pimparkar, Satish Kumar, Jayathi Murthy, Muhammad A. Alam

    NanoNET is a tool to simulate the Nanobundle Network Thin Film Transistors (NB-TFTs). Random networks of carbon nanotubes with thousands of tubes and random orientation can be simulated using this tool. The final answer can be compactly formulated in the formula shown in the picture. Here ID is …

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