NanoMOS 2.5 Source Code Download
Citations Non-affiliated (10) | Affiliated (0)
Non-affiliated authors
- T. Dutta, Quentin Rafhay, Raphael Clerc, J. Lacord, S. Monfray, Georges Pananakakis, F. Boeuf, Gerard Ghibaudo, (2012), "Origins Of The Short Channel Effects Increase In III-V NMOSFET Technologies", Ultimate Integration on Silicon \ULIS), 2012 13th International Conference on, Ultimate Integration on Silicon \ULIS), 2012 13th International Conference on, : pg: 25-28, IEEE, 978-1-4673-0191-6, (DOI: 10.1109/ULIS.2012.6193348)
- E. Farzana, S. Chowdhury, R. Ahmed, M.Z. Rahman Khan, (2011), "Performance Analysis Of Nanoscale Double Gate MOSFETs With High-K Gate Stack", Applied Mechanics And Materials, Trans Tech Publ, 110: pg: 1892-1899, (DOI: 10.4028/www.scientific.net/AMM.110-116.1892)
- Z. Kordrostami, M. Sheikhi, A. Zarifkar, (2011), "Influence Of Channel And Underlap Engineering On The High Frequency And Switching Performance Of CNTFETs", Nanotechnology, IEEE Transactions On, IEEE, 99: pg: 1-7, 1536-125X (DOI: 10.1109/TNANO.2011.2181998 )
- Keng-Ming Liu, (2011), "Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis", Japanese Journal of Applied Physics, IOP Publishing, 50, 4: pg: -, (DOI: 10.1143/JJAP.50.04DC19)
- Keng-Ming Liu, L. Register, S.K. Banerjee, (2011), "Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs", IEEE Transactions on Electron Devices, IEEE, 58, 1: pg: 4-10, 10, (DOI: 10.1109/TED.2010.2084090)
- Mohesen Hayati, Majid Seifi, Abbas Rezaei, (2010), "Double Gate MOSFET Modeling Based on Adaptive Neuro-Fuzzy Inference System for Nanoscale Circuit Simulation", ETRI Journal, Electronics and Telecommunications Research Institute, 32, 4: pg: 530-539, 08, (DOI: 10.4218/etrij.10.0109.0707)
- P. Palestri, L Lucci, S Dei Tos, D. Esseni, L. Selmi, (2010), "An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations", Semiconductor Science And Technology, IOP Publishing, 25, 5: pg: 055011-1-055011-10, 04, (DOI: 10.1088/0268-1242/25/5/055011)
- Asif Khan, Md. Ashraf, Anisul Haque, (2009), "Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling", Journal of Applied Physics, AIP, 105, 6: pg: 064505-1-064505-5, 03, 0021-8979, (DOI: 10.1063/1.3079518)
- Wanqiang Chen, L. Register, S.K. Banerjee, (2008), "Schrodinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide", Journal of Applied Physics, 103, 2: pg: 24508-, 01, (DOI: 10.1063/1.2809403)
- Keng-Ming Liu, Wanqiang Chen, L. Register, S.K. Banerjee, (2008), "Schroedinger equation Monte Carlo in three dimensions for simulation of nanoscale metal-oxide of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors", Journal of Applied Physics, 104, 11: pg: -, 01, (DOI: 10.1063/1.3031303)