The Stanford 2D Semiconductor (S2DS) model is a physics-based compact model for 2D field-effect transistors (FETs). The model relies on the drift-diffusion approach suitable for long channel devices, including quantum capacitance, simple band structure, high-field velocity saturation, contact resistance, and self-heating effects that are specific to 2D materials and 2D FETs. The model has been developed for double-gate devices and employs approximations to simplify integrals and enable compact modeling of 2D-FETs. The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyse device properties for sub-100 nm gate lengths.

• Stanford 2D Semiconductor (S2DS) Transistor Model 1.2.0 Verilog-A(VA | 24 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.2.0 Benchmarks(ZIP | 9 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.2.0 Parameters(ZIP | 264 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.2.0 Experimental Data(ZIP | 113 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.2.0 Manual(PDF | 430 KB)
• License terms

Researchers should cite this work as follows:

• Saurabh Vinayak Suryavanshi; Eric Pop (2018). Stanford 2D Semiconductor (S2DS) Transistor Model. (Version 1.2.0). nanoHUB. doi:10.4231/D39882Q1F

  BibTex | EndNote

1. 2D FET
2. 2D Semiconductor
3. Compact Model
4. drift-diffusion
5. MoS2
6. MoS2 Transistor
7. self-heating effects