See more compact models using the MIT Virtual Source (MVS) Model

The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

• MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Verilog-A(VA | 21 KB)
• MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Spectre Netlists(ZIP | 653 KB)
• MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Parameters(ZIP | 5 KB)
• MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Experimental Data(ZIP | 39 KB)
• MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Manual(PDF | 14 MB)
• License terms

Radhakrishna, U.; Lan Wei; Dong-Seup Lee; Palacios, T.; Antoniadis, D., "Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection," Electron Devices Meeting (IEDM), 2012 IEEE International, 10-13 Dec. 2012, doi: 10.1109/IEDM.2012.6479038.

Ujwal Radhakrisna, "A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF applications," Masters Thesis, Massachusetts Institute of Technology, June 2013.

U. Radhakrishna, D. Piedra, Y. Zhang, T. Palacios, D. Antoniadis, "High Voltage GaN HEMTs Compact Model: Experimental Verification, Field Plate Optimization and Charge Trapping," Electron Devices Meeting (IEDM), 2013 IEEE International, 9-11, 2013.

Researchers should cite this work as follows:

• Radhakrishna, U.; Antoniadis, D. (2014). MIT Virtual Source GaNFET-RF ( MVSG-RF) Model. nanoHUB. doi:10.4231/D3G15TC12

  BibTex | EndNote

1. Compact Model
2. NEEDS node