Fundamentals of Current Flow
Papers | 30 Jan 2022 | Contributor(s): Supriyo Datta
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...
Introduction to Quantum Transport
Quantitative Model for TMR and Spin-transfer Torque in MTJ devices
Papers | 02 Sep 2013 | Contributor(s): Deepanjan Datta, Behtash Behin-Aein, Sayeef Salahuddin, Supriyo Datta
We present a Non-Equilibrium Green's Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ||) and (4)...
Voltage Asymmetry of Spin-Transfer Torques
Experimentally, it is seen that the free magnetic layer of a spin torque transfer (STT) device experiences a larger in-plane torque when a negative (rather than positive) voltage is applied to the fixed layer. This is surprising because magnets do not have any intrinsic asymmetry. In this paper,...
Electronics from the "Bottom Up": An Intel-NCN@Purdue initiative in nanoelectronics education
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Papers | 05 Jul 2007 | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia, the Semiconductor Electronics Education Committee (SEEC), recognized that the age of vacuum tubes was ending, and that engineers would have to be educated differently if they were to realize the opportunities that the new field of...
Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
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Papers | 31 Oct 2006 | Contributor(s): POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...
Electrical Resistance: an Atomistic View
Papers | 26 Oct 2006 | Contributor(s): Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
Papers | 19 Oct 2006 | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
Papers | 06 Oct 2006 | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
Papers | 28 Sep 2006 | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
Papers | 20 Sep 2006 | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...
Electrical Conduction through Molecules
Papers | 08 Jul 2003 | Contributor(s): Ferdows Zahid, Magnus Paulsson, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as...
Resistance of a Molecule
Papers | 29 Apr 2003 | Contributor(s): Magnus Paulsson, Ferdows Zahid, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as...
Theory of Ballistic Nanotransistors
Papers | 27 Nov 2002 | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...