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Electron Transport in Schottky Barrier CNTFETs
Papers | 24 Oct 2017 | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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A Signed Particle Formulation of Non-Relativistic Quantum Mechanics
Papers | 03 Jun 2015 | Contributor(s):: Jean Michel D Sellier
A formulation of non-relativistic quantum mechanics in terms of Newtonian particles is presented in the shape of a set of three postulates. In this new theory, quantum systems are described by ensembles of signed particles which behave as field-less classical objects which carry a...
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Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
Papers | 28 Jun 2013 | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...
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First Principles Non-Equilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling
Papers | 01 Dec 2008 | Contributor(s):: Kirk H. Bevan
Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex quantum mechanical phenomena such as wavefunction coupling, surface states, and interface bonds have begun...
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Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
Papers | 14 Jan 2008 | Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...
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Electron-Phonon and Electron-Electron Interactions in Quantum Transport
Papers | 14 Jan 2008 | Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...
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Quantum Ballistic Transport in Semiconductor Heterostructures
Papers | 27 Aug 2007 | Contributor(s):: Michael McLennan
The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam epitaxy (MBE), allow for growth of ultra-thin layers of differing material compositions. Structures can be...